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Laser Projection Display Gallium Nitride GaN Wafer 350um Thickness

Dummy Grade 6Inch Sic Substrate Wafer Dia150mm 4H-N 500mm Thickness

2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device

4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode

Ti+ Al2O3 Sapphire Wafer , Sapphire Crystal Glass Lens Doped Titanium

Single Crystal Ultra Thin Sapphire Wafer , Sapphire Substrate 2 Inch 0.1mm Thickness

Dia 150 Mm Sapphire Windows / Sapphire Crystal Glass Extreme Surface Hardness

2 / 3 Inch Sapphire Parts , Sapphire Substrate 0.4mm Thickness High Working Temperature

Optical Glass Plate , Single Crystal Glass For Wrist Watch Glass Lens

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A - Axis 4 Inch Sapphire Optical Windows 85% Vision Light Transmissivity

2 Inch A - Axis Sapphire Wafer Radiation Resistance For Epi - Ready Test

Colorless Transparent Sapphire Optical Windows , Sapphire Glass Lens For Phone

Customized Size Raw Sapphire Wafer , Sapphire Lens For Phone Cover Glass

Protective Cover Glass Sapphire Optical Windows Wear Corrosion Resistance

Double Side Polished Sapphire Windows For Fingerprint Recognition Applications

Watch Protective Screen Custom Sapphire Glass A - Axis Round Sapphire Rough Lens

4H-N As-Cut Silicon Carbide Wafer 0.5mm Thickness For Power Electronics

LED Eli - Ready Wafer Sapphire Ball , Sapphire Glass Lens With Custom Size

Multi - Pass Amplifiers Ruby Laser Rod / Laser Ruby Rod For LED Eli - Ready Wafer

Al2O3 Single Crystal Material Ruby Ball Lens For Wear Resisting Bearing

3.58 Density Mgo Substrate / Mgo Wafer Magnesium Oxide Crystal Substrate

C - Axis Sapphire Wafer Single Side Polished 3 Inch Al2O3 Crystal Optical Lens

Dia 103mm C - Axis Sapphire Optical Windows Single Side Polished Customized Size

N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch

4 Inch Gallium Arsenide Wafer , Gaas Substrate For Low Temperature Alloys

3 Inch Dia 76.2mm IC Silicon Wafer , Single Side Polished Silicon Wafer

Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch

High Compressive Strength Sapphire Bearings 85％ Vision Light Transmissivity

Customized Size Synthetic Sapphire Parts Circle Ring Diameter 0.2 - 300 Mm

COMPANY INTRODUCTION

SHANGHAI FAMOUS TRADE CO.,LTD

SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services ...

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Company News

2025/08/04

SiC Metalens with Promising Thermal Management Capabilities for High-Power Laser Systems

Westlake University Team Develops Novel SiC Metalens with Promising Thermal Management Capabilities for High-Power Laser Systems The research group led by Prof. Min Qiu at Westlake University has successfully developed a novel homogenous 4H-SiC (silicon carbide) metalens, offering a unique solution to address thermal drift in high-power laser processing. By leveraging the high thermal conductivity and low loss characteristics of 4H-SiC, the new metalens effectively suppresses thermal drift without the need for complex external cooling systems. This breakthrough not only provides crucial support for high-power laser systems, but also opens new possibilities in precision instrumentation, polar exploration, aerospace, and other fields. In applications demanding extremely high machining accuracy and surface quality, the 4H-SiC metalens can play a vital role in providing a more efficient and compact solution for high-power laser systems. The related paper, titled “4H-SiC Metalens: Mitigating Thermal Drift Effect in High-Power Laser Irradiation,” was recently published in Advanced Materials [1]. A New Strategy for Tackling Thermal Drift in High-Power Laser Processing Researchers observed a recurring issue in high-power laser precision cutting: long-term operation led to heat accumulation in lenses, deforming internal optical elements and degrading machining consistency and morphology. This stems from the partial absorption of laser energy by optical components, which is converted into heat. In materials like quartz and CaF₂ with poor thermal conductivity, local overheating occurs due to ineffective heat dissipation. To resolve this, the team fabricated a transparent 4H-SiC metalens with billions of nanopillars (200–400 nm in diameter and ~1 µm deep) engineered on its surface. “Thanks to the high refractive index of SiC, by tuning the nanopillar dimensions we can manipulate the optical phase and achieve focusing performance comparable to commercial lenses. Combined with its high thermal conductivity, efficient heat dissipation is realized in a much thinner device,” said Boqu Chen. Experimental Demonstration of Outstanding Thermal Stability Under simulated industrial conditions, the team compared their 4H-SiC metalens with a leading commercial objective from Mitutoyo Japan. Upon continuous 15 W, 1030 nm pulsed laser irradiation for 1 hour, the 4H-SiC metalens exhibited only a 3.2 °C temperature rise, with focal shift merely one-tenth of that observed in traditional objectives. Conventional cooling generally relies on external water-cooling rings to remove heat, which increases system complexity, cost, energy consumption, and carbon emissions. In contrast, the metalens‐based solution requires no additional cooling components — simply mounting the lens allows rapid solid-state heat extraction, enabling stable, long‐term operation while simplifying use and maintenance. Moving Toward Mass Production Multiple types of SiC metalenses have now been fabricated for different applications, with efforts underway to reduce costs and boost throughput. The technique has already been applied in collaboration with several companies and institutions. 4H-SiC metalenses are expected to accelerate the application of high-power laser systems in increasingly demanding environments. Leveraging our expertise in SiC materials, we are able to supply a full range of SiC-based products, including: 4H-SiC and 6H-SiC substrates (research and device grade, 2–6 inch) SiC epitaxial wafers (n-type / p-type, HPSI, custom thicknesses and doping) Optical-grade SiC windows and lenses Patterned SiC substrates for optoelectronic and MEMS devices Custom-machined SiC components (heat spreaders, laser mirrors, precision parts) Please let us know if you would like datasheets, quotations or customized solutions for your application. Reference Chen, B., et al. 4H-SiC Metalens: Mitigating Thermal Drift Effect in High-Power Laser Irradiation. Advanced Materials, 2024, 2412414. https://doi.org/10.1002/adma.202412414

2025/07/28

Annealing Process of Quartz Glass

Annealing Process of Quartz Glass Quartz glass generates stress when subjected to non-uniform temperatures. At any specific temperature, quartz glass has a corresponding atomic structure, where the spatial arrangement of atoms is "optimal." Atomic gaps change with temperature, a phenomenon termed thermal expansion. When quartz glass is heated unevenly, it causes differential expansion. Stress arises when heated regions expand outward but are constrained by cooler surroundings—a compressive stress that typically does not damage the product. However, if the temperature drops too rapidly, the viscosity increases too quickly, preventing atomic structures from adjusting to the lower temperature, resulting in tensile stress that can cause fractures. Stress accumulates as temperature decreases, reaching critical levels upon cooling completion. The temperature at which quartz glass viscosity exceeds 10¹⁴.⁶ poise is termed the strain point; at this stage, stress cannot be relieved due to high viscosity. Annealing Parameters To mitigate stress, quartz glass must be heated to a temperature allowing atomic rearrangement (typically ≤1 hour). The annealing point, defined as the temperature 15 minutes after heating begins, is slightly above the strain point (~10–100 poise viscosity). For low-water-soluble fused quartz, strain and annealing points are approximately 1050°C and 1080°C, respectively. Annealing does not require reaching the annealing point; it can occur at any temperature above the strain point, with lower temperatures requiring longer durations. However, excessively high temperatures risk opacity and increased residual stress. Optimally, annealing at 1150–1180°C for 20–30 minutes balances stress relief and minimizes opacity. Key principles include using the lowest peak temperature feasible and maintaining uniform temperature gradients. Post-annealing cooling must be controlled: First 200°C cooling phase: ≤100°C/min to avoid thermal shock. Subsequent cooling: Accelerate as permitted by thermal expansion coefficients. Residual Stress and Virtual Temperature Even after stress relief, residual stresses persist due to cooling-induced thermal gradients. These stresses are minimized by slowing cooling during initial stages. Residual stress impacts non-optical applications minimally but may cause detectable dimensional changes in thick components. Virtual Temperature Phenomenon Rapid cooling creates a virtual temperature—a metastable state where atomic structures mimic high-temperature configurations. If virtual temperature exceeds the annealing temperature, density changes occur. For example, a quartz rod annealed at 1150–1180°C (vs. virtual temperature of 1250°C) shrinks by 0.01–0.03 mm, risking dimensional nonconformity. Practical Considerations Long-bar components: Pre-anneal raw materials to reduce virtual temperature and post-processing warpage. Optical applications: Strict cooling rates ensure refractive index uniformity. Stress detection: Polarized light analysis identifies residual stress in thick sections. Conclusion Precise temperature control and gradient management during annealing are critical to preserving quartz glass integrity. By adhering to strain point principles and virtual temperature dynamics, manufacturers achieve optimal stress relief while maintaining dimensional and optical stability. ZMSH specializes in the professional supply and custom processing of high-purity quartz materials and components, offering a comprehensive product portfolio that includes quartz rods, quartz tubes, quartz ingots, quartz sheets, quartz rings, quartz wafers, and optical quartz glass. Our services support both standard specifications and irregular geometries, catering to the stringent requirements of semiconductor, optical, medical, and industrial sectors. By integrating advanced material selection, precision machining, and rigorous quality assurance, we deliver one-stop solutions—from material customization to final product delivery—ensuring optimal performance and reliability in critical applications.

2025/07/28

Why Does Quartz Require Annealing?

Why Does Quartz Require Annealing? Quartz glass is classified by processing method, application, and appearance into categories such as fused transparent quartz glass, gas-refined transparent quartz glass, synthetic quartz glass, opaque quartz glass, optical quartz glass, semiconductor-grade quartz glass, and photoelectric quartz glass. Based on purity, it is further categorized into high-purity, standard, and doped types. Devitrification (crystallization) is an inherent defect in quartz glass. Due to its metastable state with higher internal energy than crystalline cristobalite, SiO₂ molecules vibrate and gradually rearrange into crystalline structures over time. This process accelerates in regions with impurities (e.g., alkali ions like K, Na, Li, Ca, Mg), which reduce viscosity and promote nucleation. Crystallization typically initiates at surfaces and propagates inward, forming defects. · Thermal Stress Formation As a poor thermal conductor, quartz glass develops thermal gradients during heating/cooling. For example: Heating: Surface layers expand faster than the cooler interior, generating compressive stress (surface) and tensile stress (interior). Cooling: Rapid cooling induces tensile stress at the surface and compressive stress internally. Quartz’s high compressive strength tolerates thermal shocks during flame processing (e.g., hydrogen-oxygen flame welding). However, abrupt cooling (e.g., quenching in water at >500°C) causes fractures due to excessive tensile stress. · Stress Types Temporary Stress: Generated below the strain point (where viscosity limits stress relief). Resolved by temperature equalization. Permanent Stress: Remains after cooling to room temperature, caused by thermal gradients during cooling above the strain point. Affects subsequent processing and requires annealing to eliminate. · Annealing Process Annealing involves four stages to redistribute internal stress: 1. Heating: Gradually raise temperature to 1100°C at a rate of 4.5/R² °C/min (R = radius of the quartz product) to avoid thermal shock. 2. Soaking: Maintain peak temperature (1100–1150°C) to homogenize thermal gradients and reduce stress. 3. Cooling: 1100–950°C: 15°C/h 950–750°C: 30°C/h 750–450°C: 60°C/h Slow cooling minimizes residual stress. 4. Natural Cooling: Below 450°C, disconnect furnace power and allow gradual cooling to annealing temperature), causing post-annealing dimensional shifts. Pre-annealing minimizes this effect. Optical Applications: Critical for stress-free optical components; residual stress alters refractive index uniformity. By systematically addressing thermal gradients and stress mechanisms, annealing ensures quartz glass’s mechanical stability, optical clarity, and long-term performance in high-temperature or precision applications. ZMSH specializes in the R&D and production of advanced annealing processes for quartz glass, offering comprehensive solutions from process design and custom equipment development to rigorous quality testing. Our services cater to diverse quartz products, including semiconductor-grade, optical-grade, medical-grade, and industrial-grade quartz components, addressing critical annealing requirements across industries.

Gallium Nitride Wafer

Sapphire Wafer

SiC Substrate

Sapphire Optical Windows

IC Silicon Wafer

Synthetic Sapphire Rod

Fused Quartz Plate

Sapphire Parts

Synthetic Gemstone

Semiconductor Equipment

LiNbO3 Wafer

GaAs Wafer

Indium Phosphide Wafer

Ceramic Substrate

Lab Wrapper

Laser Projection Display Gallium Nitride GaN Wafer 350um Thickness

Dummy Grade 6Inch Sic Substrate Wafer Dia150mm 4H-N 500mm Thickness

2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device

4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode

Ti+ Al2O3 Sapphire Wafer , Sapphire Crystal Glass Lens Doped Titanium

Single Crystal Ultra Thin Sapphire Wafer , Sapphire Substrate 2 Inch 0.1mm Thickness

Dia 150 Mm Sapphire Windows / Sapphire Crystal Glass Extreme Surface Hardness

2 / 3 Inch Sapphire Parts , Sapphire Substrate 0.4mm Thickness High Working Temperature

Optical Glass Plate , Single Crystal Glass For Wrist Watch Glass Lens

SHANGHAI FAMOUS TRADE CO.,LTD

SiC Substrate

High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon Carbide Substrate

2 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector

4inch Sic Ingot Silicon Carbide 5 - 15mm Thickness for semiconductors

Sapphire Wafer

Semiconductor Wafer Custom Sapphire Glass / Sapphire Windows Special Orientation

sapphire wafer Thickness 0.43mm Sapphire Components Customized Size And Orientations

Square Sapphire Wafer / Sapphire Crystal Glass 10x10mm 5x5mm For Optical Lens

Gallium Nitride Wafer

Laser Projection Display Gallium Nitride GaN Wafer 350um Thickness

2inch 4inch free-standing GaN Gallium Nitride Substrates Template for led

2INCH 4INCH NPSS/FSS AlN template on sapphire EPI-wafer AlN-On-Sapphire wafer