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SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services ...
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ZMSH Case Study: Premier Supplier of High-Quality Synthetic Colored Sapphires
ZMSH Case Study: Premier Supplier of High-Quality Synthetic Colored Sapphires     Introduction ZMSH stands as a leading name in the synthetic gemstone industry, providing an extensive range of high-quality, vibrant colored sapphires. Our offerings include a wide palette of colors such as royal blue, vivid red, yellow, pink, pink-orange, purple, and multiple green tones, including emerald and olive green. With a commitment to precision and excellence, ZMSH has become a preferred partner for businesses that require reliable, visually striking, and durable synthetic gemstones. Highlighting Our Synthetic Gemstones At the core of ZMSH’s product range are synthetic sapphires that emulate the brilliance and quality of natural gemstones while offering numerous advantages. As a synthetic product, these sapphires are carefully manufactured to achieve exceptional color consistency and durability, making them a superior alternative to naturally occurring stones. Benefits of Choosing Synthetic Sapphires Unmatched Consistency: Our lab-created sapphires are produced under controlled conditions, ensuring they meet strict quality standards. This process guarantees a flawless appearance, free from the color and clarity variations often seen in mined gemstones. Broad Color Selection: ZMSH offers a diverse array of colors, including royal blue, ruby red, and softer tones like pink and pink-orange. We also provide several shades of green, from emerald to olive, tailored to meet specific customer demands. This flexibility in color and tone customization makes our sapphires perfect for a wide range of design and industrial purposes. Affordable Pricing: Lab-grown sapphires present a more budget-friendly alternative without sacrificing visual appeal or structural integrity. They provide excellent value for clients who need high-quality gemstones at a fraction of the cost of natural stones, making them ideal for both luxury products and practical applications. Environmentally and Ethically Sound: By opting for synthetic gemstones, customers can avoid the environmental damage and ethical concerns often linked with traditional gemstone mining. ZMSH’s synthetic sapphires are created in an eco-conscious manner, offering a sustainable and responsible choice. Strength and Versatility: Synthetic sapphires possess the same hardness as their natural counterparts, making them ideal for a variety of uses, from high-end jewelry to industrial-grade applications. With a hardness of 9 on the Mohs scale, these gems ensure long-lasting durability in all settings   Conclusion ZMSH is dedicated to delivering top-tier synthetic colored sapphires, offering clients an array of customizable, cost-efficient, and sustainable gemstone solutions. Whether you’re seeking royal blue for elegant accessories, emerald green for industrial components, or any other striking color, ZMSH provides gemstones that combine beauty, consistency, and strength. Our expertise in producing synthetic sapphires allows us to meet the needs of various industries, ensuring reliable quality and ethical practices in every order.
Case Study: ZMSH's Breakthrough with the New 4H/6H-P 3C-N SiC Substrate
Introduction ZMSH has consistently been at the forefront of silicon carbide (SiC) wafer and substrate innovation, known for providing high-performance 6H-SiC and 4H-SiC substrates that are integral to the development of advanced electronic devices. In response to the growing demand for more capable materials in high-power and high-frequency applications, ZMSH has expanded its product offerings with the introduction of the 4H/6H-P 3C-N SiC substrate. This new product represents a significant technological leap by combining traditional 4H/6H polytype SiC substrates with innovative 3C-N SiC films, offering a new level of performance and efficiency for next-generation devices. Existing Product Overview: 6H-SiC and 4H-SiC Substrates Key Features Crystal Structure: Both 6H-SiC and 4H-SiC possess hexagonal crystal structures. 6H-SiC has slightly lower electron mobility and a narrower bandgap, whereas 4H-SiC boasts higher electron mobility and a wider bandgap of 3.2 eV, making it suitable for high-frequency, high-power applications. Electrical Conductivity: Available in both N-type and semi-insulating options, allowing flexibility for various device needs. Thermal Conductivity: These substrates exhibit thermal conductivities ranging from 3.2 to 4.9 W/cm·K, which is essential for dissipating heat in high-temperature environments. Mechanical Strength: The substrates feature a Mohs hardness of 9.2, providing robustness and durability for use in demanding applications. Typical Uses: Commonly employed in power electronics, high-frequency devices, and environments requiring resistance to high temperatures and radiation. Challenges While 6H-SiC and 4H-SiC are highly valued, they encounter certain limitations in specific high-power, high-temperature, and high-frequency scenarios. Issues such as defect rates, limited electron mobility, and narrower bandgap restrict their effectiveness for next-generation applications. The market increasingly requires materials with improved performance and fewer defects to ensure higher operational efficiency. New Product Innovation: 4H/6H-P 3C-N SiC Substrates To overcome the limitations of its earlier SiC substrates, ZMSH has developed the 4H/6H-P 3C-N SiC substrate. This novel product leverages epitaxial growth of 3C-N SiC films on 4H/6H polytype substrates, providing enhanced electronic and mechanical properties. Key Technological Improvements Polytype and Film Integration: The 3C-SiC films are grown epitaxially using chemical vapor deposition (CVD) on 4H/6H substrates, significantly reducing lattice mismatch and defect density, leading to improved material integrity. Enhanced Electron Mobility: The 3C-SiC film offers superior electron mobility compared to the traditional 4H/6H substrates, making it ideal for high-frequency applications. Improved Breakdown Voltage: Tests indicate that the new substrate offers significantly higher breakdown voltage, making it a better fit for power-intensive applications. Defect Reduction: Optimized growth techniques minimize crystal defects and dislocations, ensuring long-term stability in challenging environments. Optoelectronic Capabilities: The 3C-SiC film also introduces unique optoelectronic features, particularly useful for ultraviolet detectors and various other optoelectronic applications. Advantages of the New 4H/6H-P 3C-N SiC Substrate Higher Electron Mobility and Breakdown Strength: The 3C-N SiC film ensures superior stability and efficiency in high-power, high-frequency devices, resulting in longer operational lifespans and higher performance. Improved Thermal Conductivity and Stability: With enhanced heat dissipation capabilities and stability at elevated temperatures (over 1000°C), the substrate is well-suited for high-temperature applications. Expanded Optoelectronic Applications: The substrate’s optoelectronic properties broaden its scope of application, making it ideal for ultraviolet sensors and other advanced optoelectronic devices. Increased Chemical Durability: The new substrate exhibits greater resistance to chemical corrosion and oxidation, which is vital for use in harsh industrial environments. Application Areas The 4H/6H-P 3C-N SiC substrate is ideal for a wide range of cutting-edge applications due to its advanced electrical, thermal, and optoelectronic properties: Power Electronics: Its superior breakdown voltage and thermal management make it the substrate of choice for high-power devices such as MOSFETs, IGBTs, and Schottky diodes. RF and Microwave Devices: The high electron mobility ensures exceptional performance in high-frequency RF and microwave devices. Ultraviolet Detectors and Optoelectronics: The optoelectronic properties of 3C-SiC make it particularly suitable for UV detection and various optoelectronic sensors. Conclusion and Product Recommendation ZMSH’s launch of the 4H/6H-P 3C-N SiC crystal substrate marks a significant technological advancement in SiC substrate materials. This innovative product, with its enhanced electron mobility, reduced defect density, and improved breakdown voltage, is well-positioned to meet the growing demands of the power, frequency, and optoelectronics markets. Its long-term stability under extreme conditions also makes it a highly reliable choice for a range of applications. ZMSH encourages its customers to adopt the 4H/6H-P 3C-N SiC substrate to take advantage of its cutting-edge performance capabilities. This product not only fulfills the stringent requirements of next-generation devices but also helps customers achieve a competitive edge in a rapidly evolving market.   Product Recommendation   4inch 3C N-type SiC Substrate Silicon Carbide Substrate Thick 350um Prime Grade Dummy Grade       - support customized ones with design artwork   - a cubic crystal (3C SiC), made by SiC monocrystal   - High hardness, Mohs hardness reaches 9.2, second only to diamond.   - excellent thermal conductivity, suitable for high-temperature environments.   - wide bandgap characteristics, suitable for high-frequency, high-power electronic devices.
Basic Structure of GaN-based LED Epitaxial Layers
Basic Structure of GaN-based LED Epitaxial Layers 01 Introduction The epitaxial layer structure of gallium nitride (GaN)-based LEDs is the core determinant of device performance, requiring careful consideration of material quality, carrier injection efficiency, luminescent efficiency, and thermal management. With evolving market demands for higher efficiency, yield, and throughput, epitaxial technology continues to advance. While mainstream manufacturers adopt similar foundational structures, key differentiators lie in nuanced optimizations that reflect R&D capabilities. Below is an overview of the most common GaN LED epitaxial structure.       02 Epitaxial Structure Overview Sequentially grown on the substrate, the epitaxial layers typically include: 1. Buffer layer 2. Undoped GaN layer(Optional n-type AlGaN layer) 3. N-type GaN layer 4. Lightly doped n-type GaN layer 5. Strain-relief layer 6. Multiple quantum well (MQW) layer 7. AlGaN electron blocking layer (EBL) 8. Low-temperature p-type GaN layer 9. High-temperature p-type GaN layer 10.Surface contact layer       Common GaN LED Epitaxial Structures       Detailed Layer Functions   1)Buffer Layer Grown at 500–800°C using binary (GaN/AlN) or ternary (AlGaN) materials. Purpose: Mitigates lattice mismatch between substrate (e.g., sapphire) and epilayers to reduce defects. Industry trend: Most manufacturers now pre-deposit AlN via PVD sputtering before MOCVD growth to enhance throughput.   2)Undoped GaN Layer Two-stage growth: Initial 3D GaN islands followed by high-temperature 2D GaN planarization. Outcome: Provides atomically smooth surfaces for subsequent layers.   3)N-type GaN Layer Si-doped (8×10¹⁸–2×10¹⁹ cm⁻³) for electron supply. Advanced option: Some designs insert an n-AlGaN interlayer to filter threading dislocations.             4)Lightly Doped n-GaN Layer Lower doping (1×10¹⁸–2×10¹⁸ cm⁻³) creates a current-spreading high-resistance region. Benefits: Improves voltage characteristics and luminescence uniformity.   5)Strain-Relief Layer InGaN-based transition layer with graded In composition (between GaN and MQW levels). Design variants: Superlattices or shallow-well structures to gradually accommodate lattice strain.   6)MQW (Multiple Quantum Well)   InGaN/GaN periodic stacks (e.g., 5–15 pairs) for radiative recombination. Optimization: Si-doped GaN barriers reduce operating voltage and enhance brightness. latest company news about Basic Structure of GaN-based LED Epitaxial Layers 2   7)AlGaN Electron Blocking Layer (EBL) High-bandgap barrier to confine electrons within MQWs, boosting recombination efficiency.             8)Low-Temp p-GaN Layer Mg-doped layer grown slightly above MQW temperature to: Enhance hole injection Protect MQWs from subsequent high-temperature damage   9)High-Temp p-GaN Layer Grown at ~950°C to: Supply holes Planarize V-pits propagating from MQWs Reduce leakage currents   10)Surface Contact Layer Heavily Mg-doped GaN for ohmic contact formation with metal electrodes, minimizing operating voltage.   03 Conclusion The GaN LED epitaxial structure exemplifies the synergy between materials science and device physics, where each layer critically impacts electro-optical performance. Future advancements will focus on defect engineering, polarization management, and novel doping techniques to push efficiency boundaries and enable emerging applications.     As a pioneer in gallium nitride (GaN) LED epitaxial technology, ZMSH has pioneered advanced GaN-on-sapphire and GaN-on-SiC epitaxial solutions, leveraging proprietary MOCVD (Metal-Organic Chemical Vapor Deposition) systems and precision thermal management to deliver high-performance LED wafers with defect densities below 10⁶ cm⁻² and uniform thickness control within ±1.5%. Our customizable substrates—including GaN-on-sapphire, blue sapphire, silicon carbide, and metal composite substrates—enable tailored solutions for ultra-high-brightness LEDs, micro-LED displays, automotive lighting, and UV-C applications. By integrating AI-driven process optimization and ultrafast pulsed laser annealing, we achieve 95% reliability, supported by automotive-grade certifications (AEC-Q101) and mass production scalability for 5G backlights, AR/VR optics, and industrial IoT devices.     The following is GaN substrate & Sapphire wafer of ZMSH:             * Please contact us for any copyright concerns, and we will promptly address them.            

2025

06/06

The "core strength" of semiconductor equipment - silicon carbide components
The "core strength" of semiconductor equipment - silicon carbide components       Silicon carbide (SiC) is an excellent structural ceramic material. Silicon carbide components, which are equipment components mainly made of silicon carbide and its composite materials, possess characteristics such as high density, high thermal conductivity, high bending strength, and large elastic modulus. They can adapt to the harsh reaction environments of strong corrosiveness and ultra-high temperatures in manufacturing processes such as wafer epitaxy, etching, etc. Therefore, they are widely used in main semiconductor equipment such as epitaxial growth equipment, etching equipment, oxidation/diffusion/annealing equipment, etc.   According to the crystal structure, silicon carbide has many crystal forms. Currently, the common types of SiC are mainly 3C, 4H and 6H. Different crystal forms of SiC have different applications. Among them, 3C-SiC is also commonly referred to as β-SiC. One important application of β-SiC is as a film and coating material. Therefore, at present, β-SiC is the main material used for graphite base coating.             According to the preparation process, silicon carbide components can be classified into chemical vapor deposition silicon carbide (CVD SiC), reaction sintering silicon carbide, recrystallization sintering silicon carbide, atmospheric pressure sintering silicon carbide, hot pressing sintering silicon carbide, and hot isostatic pressing sintering silicon carbide, etc.             Among the various methods for preparing silicon carbide materials, the chemical vapor deposition method produces products with high uniformity and purity, and this method also has strong process controllability. CVD silicon carbide materials are particularly suitable for use in the semiconductor industry due to their unique combination of excellent thermal, electrical and chemical properties.       The market size of silicon carbide components   01 CVD silicon carbide components   CVD silicon carbide components are widely used in etching equipment, MOCVD equipment, SiC epitaxial equipment, and rapid heat treatment equipment, among others.   Etching equipment: The largest market segment for CVD silicon carbide components is etching equipment. CVD silicon carbide components in etching equipment include focusing rings, gas spray heads, trays, edge rings, etc. Due to the low reactivity and conductivity of CVD silicon carbide towards chlorine- and fluorine-containing etching gases, it makes it an ideal material for components such as focusing rings in plasma etching equipment.       Silicon carbide focusing ring       Graphite base coating: Low-pressure chemical vapor deposition (CVD) is currently the most effective process for preparing dense SiC coatings. The CVD-SiC coating has the advantages of controllable thickness and uniformity. SiC coated graphite substrates are often used as components in metal organic chemical vapor deposition (MOCVD) equipment to support and heat single crystal substrates, and are the core key components of MOCVD equipment.       02 Reaction Sintering of Silicon Carbide Components   SiC materials subjected to reaction sintering (reaction melting infiltration or reaction bonding) can have a shrinkage rate of the sintering line controlled below 1%. At the same time, the sintering temperature is relatively low, which significantly reduces the requirements for deformation control and sintering equipment. Therefore, this technology has the advantage of facilitating the large-scale fabrication of components, and has been widely applied in the fields of optical and precision structure manufacturing.   For certain high-performance optical components in key manufacturing equipment for integrated circuits, there are strict requirements for material preparation. By using the method of reactive sintering of silicon carbide substrate combined with chemical vapor deposition of silicon carbide (CVDSiC) film layer to fabricate high-performance reflectors, by optimizing key process parameters such as precursor types, deposition temperature, deposition pressure, reaction gas ratio, gas flow field, and temperature field, large-area and uniform CVD SiC film layers can be prepared, enabling the mirror surface accuracy to approach the performance indicators of similar products from abroad.       Silicon carbide optical mirrors for lithography machines       The experts from the China Academy of Building Materials Science and Technology have successfully developed a proprietary preparation technology, enabling the production of large-sized, complex-shaped, highly lightweight, fully enclosed lithography machine-use silicon carbide ceramic square mirrors and other structural and functional optical components.       The performance of reaction-sintered silicon carbide developed by the China Academy of Building Materials Science and Technology is comparable to that of similar products from foreign enterprises.         At present, the companies that are leading in the research and application of precision ceramic components for the core equipment of integrated circuits abroad include Kyocera of Japan, CoorsTek of the United States, and BERLINER GLAS of Germany, among others. Among them, Kyocera and CoorsTek account for 70% of the market share of high-end precision ceramic components used in integrated circuit core equipment. In China, there are China National Building Research Institute, Ningbo Volkerkunst, etc. Our country started relatively late in the research on the preparation technology and application promotion of precision silicon carbide components for integrated circuit equipment, and still has a gap compared with international leading enterprises.       As a pioneer in advanced silicon carbide component manufacturing, ZMSH has established itself as a comprehensive solutions provider for precision SiC products, offering end-to-end capabilities from customized SiC mechanical parts to high-performance substrates and ceramic components. Leveraging proprietary pressureless sintering and CNC machining technologies, we deliver tailored SiC solutions with exceptional thermal conductivity (170-230 W/m·K) and mechanical strength (flexural strength ≥400MPa), serving demanding applications across semiconductor equipment, electric vehicle power systems, and aerospace thermal management. Our vertically integrated production covers the entire value chain - from high-purity SiC powder synthesis to complex near-net-shape ceramic component fabrication - enabling precise customization of dimensional tolerances (up to ±5μm) and surface finishes (Ra≤0.1μm) for both standard and application-specific designs. The company's automotive-qualified 6-inch/8-inch SiC substrates feature best-in-class micropipe densities (

2025

06/06

Sapphire Watch – No Misnomer Here!
   Sapphire – No Misnomer Here!         Watch enthusiasts are certainly familiar with the term "sapphire crystal," as the vast majority of well-known watch models—except for vintage-inspired pieces—almost universally feature this material in their specifications. This raises three key questions:     1. Is sapphire valuable? 2. Is a "sapphire crystal" watch glass really made of sapphire? 3. Why use sapphire?       In reality, the sapphire used in watchmaking is not the same as the natural gemstone in the traditional sense. The correct term is "sapphire crystal" (sometimes called "sapphire glass"), which is a synthetic sapphire primarily composed of aluminum oxide (Al₂O₃). Since no coloring agents are added, synthetic sapphire is colorless.         From a chemical and structural perspective, there is no difference between natural and synthetic sapphire. However, compared to natural sapphire, synthetic sapphire is not particularly valuable.   The reason why major watch brands unanimously favor sapphire crystal for watch glasses isn’t just because it sounds premium—it’s mainly due to its exceptional properties:       - Hardness: Synthetic sapphire matches natural sapphire at 9 on the Mohs scale, second only to diamond, making it highly scratch-resistant (unlike acrylic, which can easily get scuffed).   - Durability: It is corrosion-resistant, heat-resistant, and highly thermally conductive.   - Optical Clarit: Sapphire crystal offers exceptional transparency, making it arguably the perfect material for modern watchmaking.         The use of sapphire crystal in watchmaking began in the 1960sand quickly became widespread. Over the following decades, it became the standard for modern watches, and today, it is practically the only choice in high-end horology.       Then, in 2011, sapphire once again became a sensation in the luxury watch industry when RICHARD MILLE unveiled the RM 056, featuring a fully transparent sapphire case—an unprecedented innovation in high-end watchmaking. Many brands soon realized that sapphire wasn’t just for watch crystals—it could also be used for cases, and it looked stunning.           Within just a few years, sapphire cases became a trend, evolving from clear transparency to vibrant colors, resulting in increasingly diverse designs. As technology advanced, sapphire-cased watches transitioned from limited editions to regular production models, and even core collections.   So today, let’s take a look at some of the sapphire-crystal-cased watches.     ARTYA     Purity Tourbillon This Purity Tourbillon by Swiss independent watchmaker ArtyA features a highly skeletonized design and a transparent sapphire case, maximizing the visual impact of the tourbillon—just as its name suggests: pure tourbillon.     BELL & ROSS     BR-X1 Chronograph Tourbillon Sapphire In 2016, Bell & Ross debuted its first sapphire watch, the BR-X1 Chronograph Tourbillon Sapphire, limited to just 5 pieces and priced at over €400,000—a true high-end statement. A year later, they released an even more transparent skeletonized version, the BR-X1 Skeleton Tourbillon Sapphire. Then, in 2021, they introduced the BR 01 Cyber Skull Sapphire, featuring their signature skull motif in a bold square case.         BLANCPAIN   L-Evolution Strictly speaking, Blancpain’s L-Evolution Minute Repeater Carillon Sapphire doesn’t have a fully sapphire case, but its transparent sapphire bridges and side windows create a striking see-through effect—a "half-step" into sapphire cases.     CHANEL           J12 X-RAY For the 20th anniversary of the J12, Chanel unveiled the J12 X-RAY. What makes this watch remarkable is that not only the case and dial are made of sapphire—the entire bracelet is too, achieving a fully transparent look that’s visually breathtaking.             CHOPARD     L.U.C Full Strike Sapphire Released in 2022, Chopard’s L.U.C Full Strike Sapphire was the first minute repeater with a sapphire case. To maximize transparency, even the gongs are made of sapphire—a world-first innovation. The watch also earned the Poinçon de Genève (Geneva Seal), the first non-metal timepiece to do so. Limited to 5 pieces.     GIRARD-PERREGAUX     Quasar In 2019, Girard-Perregaux introduced its first sapphire-cased watch, the Quasar, featuring its iconic "Three Bridges" design. Meanwhile, the Laureato Absolute collection debuted its first sapphire model in 2020, alongside the Laureato Absolute Tribute with a red transparent case—though not sapphire, but a new polycrystalline material called YAG (yttrium aluminum garnet).         GREUBEL FORSEY     30° Double Tourbillon Sapphire Greubel Forsey’s 30° Double Tourbillon Sapphire stands out because both the case and crown are made of sapphire crystal. The manually wound movement, visible through the case, boasts four series-coupled barrels for 120 hours of power reserve. Priced at over $1 million, limited to 8 pieces.     JACOB & CO.     Astronomia Flawless To fully showcase the JCAM24 manual-winding movement, Jacob & Co. created the Astronomia Flawless with a fully sapphire case. From every angle, the intricate movement appears to float in mid-air.     RICHARD MILLE     As the trendsetter in sapphire cases, RICHARD MILLE has mastered the material. Whether in men’s or women’s watches, or complicated timepieces, sapphire cases are a signature. Like carbon fiber, RICHARD MILLE also emphasizes color variations, making their sapphire watches ultra-trendy.       From sapphire crystals to sapphire cases, this material has become a symbol of high-end watchmaking innovation. Which sapphire watch is your favorite? Let us know!

2025

05/29