Product Details
Place of Origin: China
Brand Name: ZMSH
Model Number: GaN-on-Si Wafers
Payment & Shipping Terms
Delivery Time: 2-4 weeks
Payment Terms: T/T
Material: |
GaN Layer On Si Substrate |
Size: |
4inch, 6inch 8inch |
Orientation: |
<111> |
Thickness: |
500um/ 650um |
Hardness: |
9.0 Mohs |
Customization: |
Support |
Material: |
GaN Layer On Si Substrate |
Size: |
4inch, 6inch 8inch |
Orientation: |
<111> |
Thickness: |
500um/ 650um |
Hardness: |
9.0 Mohs |
Customization: |
Support |
GaN on Si Compound Wafer, Si wafer, Silicon Wafer, Compound Wafer, GaN on Si Substrate, Silicon Carbide Substrate, 4inch, 6inch, 8inch, Gallium Nitride (GaN) layer on Silicon (Si) substrate
Features of GaN on Si wafer
More about GaN on Si wafer
GaN-on-Si is a semiconductor material that combines the advantages of gallium nitride (GaN) and silicon (Si).
GaN has the characteristics of wide bandgap, high electron mobility and high-temperature resistance, which makes it have significant advantage in high-frequency and high-power applications.
However, traditional GaN devices are usually based on expensive substrate materials such as sapphire or silicon carbide.
In contrast, GaN-on-Si uses lower-cost and larger silicon wafers as substrates, greatly reducing production costs and improving compatibility with existing silicon-based processes.
This material is widely used in power electronics, RF devices and optoelectronics.
For example, GaN-on-Si devices have shown excellent performance in power management, wireless communications and solid-state lighting.
In addition, with the advancement of manufacturing technology, GaN-on-Si is expected to replace traditional silicon-based devices in a wider range of applications, promoting the further miniaturization and efficiency of electronic devices.
Further details of GaN on Si wafer
| Parameter Category | parameter | Value/Range | Remark |
| Material properties | GaN Bandgap Width | 3.4 eV | Wide bandgap semiconductor, suitable for high temperature, high voltage and high frequency applications |
| Silicon (Si) bandgap width | 1.12 eV | Silicon as substrate material provides better cost-effectiveness | |
| Thermal conductivity | 130-170 W/m·K | The thermal conductivity of the GaN layer and the silicon substrate is about 149 W/m·K | |
| Electron mobility | 1000-2000 cm²/V·s | The electron mobility of the GaN layer is higher than that of silicon | |
| Dielectric constant | 9.5 (GaN), 11.9 (Si) | Dielectric Constants of GaN and Silicon | |
| Coefficient of thermal expansion | 5.6 ppm/°C (GaN), 2.6 ppm/°C (Si) | The thermal expansion coefficients of GaN and silicon do not match, which can cause stress | |
| Lattice constant | 3.189 Å (GaN), 5.431 Å (Si) | The lattice constants of GaN and Si are not matched, which may lead to dislocations | |
| Dislocation density | 10⁸-10⁹ cm⁻² | Typical dislocation density of a GaN layer, depending on the epitaxial growth process | |
| Mechanical hardness | 9 Mohs | Gallium nitride's mechanical hardness provides wear resistance and durability | |
| Wafer specifications | Wafer diameter | 2 inches, 4 inches, 6 inches, 8 inches | Common GaN-on-Si wafer sizes |
| GaN layer thickness | 1-10 µm | Depends on specific application requirements | |
| Substrate thickness | 500-725 µm | Typical thickness of silicon substrate, supporting mechanical strength | |
| Surface roughness | < 1 nm RMS | The roughness of the surface after polishing ensures high-quality epitaxial growth | |
| Step height | < 2 nm | The step height of the GaN layer affects device performance | |
| Warpage | < 50 µm | The warpage of the wafer affects the compatibility of the manufacturing process | |
| Electrical properties | Electron concentration | 10¹⁶-10¹⁹ cm⁻³ | n-type or p-type doping concentration of GaN layer |
| Resistivity | 10⁻³-10⁻² Ω·cm | Typical resistivity of GaN layers | |
| Breakdown electric field | 3 MV/cm | The high breakdown electric field strength of the GaN layer is suitable for high voltage devices | |
| Optical performance | Emission wavelength | 365-405 nm (UV/blue light) | The emission wavelength of GaN materials, used in optoelectronic devices such as LEDs and lasers |
| Absorption coefficient | ~10⁴ cm⁻¹ | Absorption coefficient of GaN material in the visible light range | |
| Thermal properties | Thermal conductivity | 130-170 W/m·K | The thermal conductivity of the GaN layer and the silicon substrate is about 149 W/m·K |
| Coefficient of thermal expansion | 5.6 ppm/°C (GaN), 2.6 ppm/°C (Si) | The thermal expansion coefficients of GaN and silicon do not match, which can cause stress | |
| Chemical properties | Chemical stability | high | Gallium nitride has good corrosion resistance and is suitable for harsh environments |
| Surface treatment | Dust-free and pollution-free | Cleanliness requirements for GaN wafer surface | |
| Mechanical properties | Mechanical hardness | 9 Mohs | Gallium nitride's mechanical hardness provides wear resistance and durability |
| Young's modulus | 350 GPa (GaN), 130 GPa (Si) | Young's modulus of GaN and silicon, affecting the mechanical properties of the device | |
| Production parameters | Epitaxial growth method | MOCVD, HVPE, MBE | Common methods for epitaxial growth of GaN layers |
| Yield | Depends on process control and wafer size | Yield rate is affected by factors such as dislocation density and warpage | |
| Growth temperature | 1000-1200°C | Typical temperatures for epitaxial growth of GaN layers | |
| Cooling rate | Controlled cooling | To prevent thermal stress and warping, the cooling rate is usually controlled |
Samples of GaN on Si wafer
*Meanwhile, if you have any further requirements, please feel free to contact us to customize one.
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FAQ
1. Q: What about the cost of GaN on Si wafers compared with other wafers?
A: Compared with other substrate materials such as silicon carbide (SiC) or sapphire (Al2O3), silicon-based GaN wafers have obvious cost advantages, especially in the manufacture of large-size wafers.
2. Q: What about the future prospect of GaN on Si wafers?
A: GaN on Si wafers are gradually replacing traditional silicon-based technology due to their superior electronic performance and cost-effectiveness, and are playing an increasingly important role in many of the above fields.
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