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Home > Products > Gallium Nitride Wafer > N-GaAs Substrate VCSEL Epiwafer 6 Inch GaAs Orientation 100 111 Wavelength 940nm For Gigabit Ethernet

N-GaAs Substrate VCSEL Epiwafer 6 Inch GaAs Orientation 100 111 Wavelength 940nm For Gigabit Ethernet

Product Details

Place of Origin: China

Brand Name: ZMSH

Certification: ROHS

Payment & Shipping Terms

Delivery Time: 2-4weeks

Payment Terms: T/T

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Highlight:

6 inch GaAs VCSEL epiwafer

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940nm VCSEL epiwafer

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100 111 VCSEL epiwafer

Cavity Mode Tolerance:
Within3%
Cavity Mode Uniformity:
<= 1%
Dopinglevel Tolerance:
Within ±30 %
Doping Level Uniformity:
<= 10%
PL Wavelength Uniformity:
Std. Dev Better Than 2nm @inner 140mm
Thickness Uniformity:
Better Than ±3% @inner 140mm
Mole Fraction X Tolerance:
Within ±0.03
Mole Fraction X Uniformity:
<= 0.03
Cavity Mode Tolerance:
Within3%
Cavity Mode Uniformity:
<= 1%
Dopinglevel Tolerance:
Within ±30 %
Doping Level Uniformity:
<= 10%
PL Wavelength Uniformity:
Std. Dev Better Than 2nm @inner 140mm
Thickness Uniformity:
Better Than ±3% @inner 140mm
Mole Fraction X Tolerance:
Within ±0.03
Mole Fraction X Uniformity:
<= 0.03
N-GaAs Substrate VCSEL Epiwafer 6 Inch GaAs Orientation 100 111 Wavelength 940nm For Gigabit Ethernet

N-GaAs substrate VCSEL epiwafer 6 inch GaAs orientation 100 111 wavelength 940nm for Gigabit Ethernet

 

N-GaAs substrate VCSEL epiwafer‘s brief

 

The N-GaAs (n-type Gallium Arsenide) substrate VCSEL epiwafer is a critical component used in the fabrication of Vertical-Cavity Surface-Emitting Lasers (VCSELs). VCSELs are key in applications like high-speed optical communication, 3D sensing, and LIDAR. The wafer is built on an N-type GaAs substrate, which provides excellent electrical conductivity and a suitable base for epitaxial layer growth.

 

Epitaxial layers, typically composed of various compound semiconductors, are grown on the substrate to form the laser's active region. This structure allows for the vertical emission of light, offering high efficiency and easy integration into arrays. The wafer typically supports emission at wavelengths like 850 nm or 940 nm, ideal for applications in fiber optic communication and 3D sensing.

 

N-GaAs substrates provide low defect density, essential for high-performance devices, and can withstand high-temperature processing. Its mechanical stability and thermal conductivity make it suitable for high-power and high-speed applications. This wafer is commonly used in data centers, consumer electronics (e.g., facial recognition in smartphones), and automotive systems like LIDAR, due to its cost-effective and scalable production.

 


 

N-GaAs substrate VCSEL epiwafer‘s structure

 

N-GaAs Substrate VCSEL Epiwafer 6 Inch GaAs Orientation 100 111 Wavelength 940nm For Gigabit Ethernet 0


 

N-GaAs substrate VCSEL epiwafer‘s  data sheet(ZMSH VCSEL EPIWAFER.pdf)

 

N-GaAs Substrate VCSEL Epiwafer 6 Inch GaAs Orientation 100 111 Wavelength 940nm For Gigabit Ethernet 1
 


 

N-GaAs substrate VCSEL epiwafer‘s photo

 

N-GaAs Substrate VCSEL Epiwafer 6 Inch GaAs Orientation 100 111 Wavelength 940nm For Gigabit Ethernet 2N-GaAs Substrate VCSEL Epiwafer 6 Inch GaAs Orientation 100 111 Wavelength 940nm For Gigabit Ethernet 3

 


 

N-GaAs substrate VCSEL epiwafer‘s application 

 

 

The N-GaAs substrate VCSEL epiwafer is widely used in various high-tech applications due to its efficient vertical light emission, scalability, and performance advantages. Key application areas include:

 

Optical Communication:

  • VCSELs on N-GaAs substrates are widely used in fiber optic communication systems, including Gigabit Ethernet and data centers, where they support high-speed data transmission over short distances with high energy efficiency.

3D Sensing:

  • In consumer electronics, such as smartphones and tablets, VCSELs are integral to 3D sensing applications, including facial recognition (Face ID), gesture recognition, and augmented reality (AR) systems. Their compact design and power efficiency make them ideal for mobile devices.

 

LIDAR (Light Detection and Ranging):

  • VCSELs are used in LIDAR systems for autonomous vehicles, drones, and robotics to provide precise distance measurement and environmental mapping. The 940 nm wavelength is particularly useful in LIDAR due to its ability to perform well in outdoor conditions.

 

Laser Mice and Printers:

  • VCSEL epiwafers are also used in laser mice for precise motion tracking and in laser printers for high-speed, high-resolution printing.

 

Medical and Industrial Sensors:

  • In medical diagnostics and industrial automation, VCSELs are used for proximity sensing, biometric scanning, and positioning systems due to their accuracy and reliability.

 

 

N-GaAs Substrate VCSEL Epiwafer 6 Inch GaAs Orientation 100 111 Wavelength 940nm For Gigabit Ethernet 4N-GaAs Substrate VCSEL Epiwafer 6 Inch GaAs Orientation 100 111 Wavelength 940nm For Gigabit Ethernet 5N-GaAs Substrate VCSEL Epiwafer 6 Inch GaAs Orientation 100 111 Wavelength 940nm For Gigabit Ethernet 6

N-GaAs Substrate VCSEL Epiwafer 6 Inch GaAs Orientation 100 111 Wavelength 940nm For Gigabit Ethernet 7N-GaAs Substrate VCSEL Epiwafer 6 Inch GaAs Orientation 100 111 Wavelength 940nm For Gigabit Ethernet 8

These applications highlight the versatility and importance of N-GaAs substrate VCSELs in modern technology.

 


N-GaAs substrate VCSEL epiwafer‘s properties

 

The N-GaAs substrate VCSEL epiwafer possesses several important properties that make it ideal for advanced optoelectronic applications, particularly in high-speed communication and sensing technologies. Key properties include:

 

High Electrical Conductivity:

  • The n-type GaAs substrate offers excellent electrical conductivity, allowing for efficient carrier injection into the active regions of the VCSEL.

 

Low Defect Density:

  • The GaAs substrate typically has a low dislocation density, which is crucial for high-performance devices, ensuring the uniformity and reliability of the VCSEL arrays.

 

High Thermal Conductivity:

  • GaAs provides good thermal conductivity, allowing efficient heat dissipation during high-power operation, making it suitable for continuous and high-speed applications.

 

Wavelength Tunability:

  • VCSEL epiwafers grown on N-GaAs substrates can be tailored to emit light at specific wavelengths, commonly 850 nm and 940 nm, which are optimal for fiber optic communication and 3D sensing.

 

Vertical Emission:

  • The vertical-cavity structure of VCSELs allows for light emission perpendicular to the wafer surface, enabling efficient integration into arrays and making the wafer ideal for compact, high-density optical devices.

 

Scalability:

  • The N-GaAs substrate supports high-volume, low-cost production, making it an attractive choice for consumer electronics, automotive, and telecommunications industries.

 

Temperature Stability:

  • VCSELs on GaAs substrates exhibit stable performance across varying temperatures, ensuring reliable operation in demanding environments, such as data centers and autonomous vehicles.

 

These properties make the N-GaAs VCSEL epiwafer ideal for applications requiring high-speed, efficient, and reliable optoelectronic performance.

 


 

N-GaAs substrate VCSEL epiwafer in ZMSH

 

 

The N-GaAs (n-type Gallium Arsenide) substrate VCSEL epiwafer is a vital component for manufacturing VCSELs, widely used in optical communication, 3D sensing, and LIDAR. Built on N-GaAs, the wafer provides excellent electrical conductivity and a strong foundation for growing epitaxial layers, enabling high-efficiency vertical light emission at wavelengths such as 850 nm and 940 nm.

 

ZMSH supplies these high-quality wafers and ensures product reliability through advanced testing methods like PL mapping, F-P mapping, and Cavity mode analysis. These tests help maintain low defect density and ensure the uniformity of the wafers, essential for high-performance applications. ZMSH also offers wafers with different wavelengths and configurations, such as 940 nm single-junction VCSELs, meeting diverse industrial needs.

 

With ZMSH’s detailed quality control and scalability, these wafers are ideal for applications in data centers, consumer electronics (e.g., facial recognition), and automotive systems, providing cost-effective and reliable solutions.