The SiC Ingot Growing Furnace Uses PVT, Lely TSSG And LPE Methods To Grow Large Size Crystals Of 4 Inch, 6 Inch And 8 Inch

The SiC ingot growing furnace uses PVT, Lely, TSSG and LPE methods to grow large size crystals of 4 inch, 6 inch and 8 inch

SiC ingot growth equipment focuses on growing large crystals in 4 ", 6 "and 8" sizes and achieves fast growth rates. Using cutting-edge technologies including PVT, Lely, TSSG and LPE, the design incorporates a precisely-regulated axial temperature gradient system, flexible radial temperature gradient adjustment, and a smooth temperature change curve, which together promote the flattening of the crystal growth interface, thereby increasing the available crystal thickness.

By optimizing the thermal field distribution, the equipment effectively reduces the loss of raw materials, improves the effective utilization rate of powder, and significantly reduces material waste. In addition, the device enables precise control of axial and radial temperature gradients, helping to reduce stress and dislocation density within the crystal. These benefits translate directly into higher quality crystal yields, lower internal stress levels and improved product consistency, making it an indispensable tool for large-scale, cost-effective SiC crystal production.

Special crystal types for SiC ingot growing furnaces

The SiC ingot growth furnace is the core equipment of SiC crystal growth technology, supporting the production needs of different sizes of 4 inch, 6 inch and 8 inch wafers. The device integrates several advanced processes, including PVT (physical vapor transfer), Lely method, TSSG (temperature gradient solution method) and LPE (liquid phase epitaxy method). The PVT method achieves crystal growth through high temperature sublimation and recrystallization, the Lely method is used for the preparation of high-quality crystal seeds, the TSSG method controls the crystal growth rate through temperature gradients, and the LPE rule is suitable for the precise growth of epitaxial layers. The combination of these technologies significantly improves the growth efficiency and quality of SiC crystals.

The design of the SiC growth furnace allows it to flexibly grow a variety of crystal structures, such as 4H, 6H, 2H and 3C, among which the 4H structure is the first choice for power devices because of its excellent electrical properties. These crystal structures have important applications in SiC power devices and semiconductor materials, especially in power electronics, new energy vehicles, 5G communications, and high-voltage devices, where they can significantly improve device performance and energy efficiency.

In addition, the SiC growth furnace ensures high homogeneity of crystal growth and low defect rate through precise temperature control and optimized growth environment. Its production capacity is not only reflected in the stable growth of high-quality crystals, but also to meet the needs of large-scale industrial production, providing reliable technical support for the wide application of SiC materials.

Advantages of Sic ingot growing furnace

1. Unique thermal field design

The design advantages of ZMSH's PVT resistance method are mainly reflected in the following two points:

According to the process needs to design a single or multiple independent temperature controllable heaters to meet the needs of precise control of large size SiC crystal growth temperature and raw material heating temperature, the radial temperature gradient of crystal growth is controllable, which is more conducive to the crystal growth of large size (especially more than 8 inches)sic. The electromagnetic waves emitted by different coils in the induction method (coils 1 and 2 in the figure above) will have cross-regions, resulting in difficult to accurately control the crystal growth temperature.

The lifting mechanism is designed, which can find the appropriate longitudinal temperature gradient according to the characteristics of different heaters; A rotating mechanism is designed to eliminate the uneven temperature of the crucible circumference.

• The axial temperature gradient is controllable, the radial temperature gradient is adjustable, the temperature line is gentle, the crystal growth interface is approximately flat, and the crystal thickness is increased.

• Reduce raw material consumption: the internal thermal field is evenly distributed, which makes the internal temperature distribution of raw materials more uniform, greatly improve the utilization rate of powder and reduce waste.

• There is no strong coupling between axial temperature and radial temperature. The axial temperature gradient and radial temperature can be controlled with high precision respectively, which is the key to solve crystal stress and reduce crystal dislocation density.

2. High control precision

The high-precision control of SiC crystal growth furnace is one of its core technical advantages, which is mainly reflected in the following aspects: the power supply accuracy reaches 0.0005% to ensure the stability and consistency of the heating process; The gas flow control accuracy is ± 0.05L /h to ensure the accurate supply of reaction gas; The temperature control accuracy is ±0.5 ℃, which provides a uniform thermal field environment for crystal growth. The pressure control accuracy of the cavity is ±10 Pa, and stable growth conditions are maintained. These high-precision control parameters work together to ensure high-quality growth of SiC crystals.

The key components of SiC growth furnace include proportional valve, mechanical pump, gas flow meter, molecular pump and power supply. The proportional valve is used to precisely regulate the gas flow and directly affect the concentration and distribution of the reaction gas. Mechanical and molecular pumps work together to provide a high vacuum environment and reduce the impact of impurities on crystal growth; Gas flow meters ensure the accuracy of gas input and maintain stable growth conditions; The high precision power supply provides stable energy input to the heating system to ensure the accuracy of temperature control. The collaborative work of these components plays a decisive role in the growth rate, crystal quality and defect control of SiC crystals.

SiC growth furnaces from ZMSH provide a reliable guarantee for the high-quality production of SiC crystals thanks to their high precision control and optimized design of key components. This not only promotes the wide application of SiC power devices in the fields of power electronics, new energy vehicles and 5G communication, but also lays a solid foundation for the innovative development of semiconductor technology in the future. As the demand for SiC materials continues to grow, ZMSH's SiC growth furnace technology advances will further drive the industry towards higher performance and lower cost.

3. automatic operation

• Automatic response:Signal monitoring, signal feedback

• Automatic alarm:Overrun warning, dynamic security

• Active prompt:Expert system, human-computer interaction

• Automatic control:Real-time monitoring and storage of production parameters, remote access and control of mobile terminals

ZMSH's silicon carbide (SiC) furnaces incorporate cutting-edge automation technology designed to increase operating efficiency. It is designed with an automatic monitoring system that can respond to signal changes in real time and provide feedback, while automatically triggering alarms if parameters exceed a preset range. In addition, the system supports remote access, enabling users to monitor parameters in real time and achieve precise control. Further, the system has built-in active prompt function, which is convenient for remote support by experts, but also optimizes the interaction experience between humans and machines, ensuring smooth operation.

This series of innovative features significantly reduces the need for manual intervention, strengthens the management accuracy of the production process, effectively guarantees the high-quality output of SiC ingot, and lays a solid foundation for efficiency improvement in large-scale manufacturing environments.

Silicon carbide single crystal growth furnace display