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Home > Products > Semiconductor Equipment > Sic raw material synthesis furnace 50kg resistance preparation of high purity Sic crystal

Sic raw material synthesis furnace 50kg resistance preparation of high purity Sic crystal

Product Details

Place of Origin: CHINA

Brand Name: ZMSH

Certification: rohs

Model Number: Sic raw material synthesis furnace

Payment & Shipping Terms

Minimum Order Quantity: 1

Price: by case

Delivery Time: 5-10months

Payment Terms: T/T

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Highlight:
Purpose::
Sic Raw Material Synthesis Furnace
Dimensions (L × W × H)::
4000 X 3400 X 4300 Mm Or Customize
Loading Capacity::
50kg
Heating Method::
Induction Heating
Maximum Furnace Temperature::
2400℃
Heating Power Supply::
2×40kW
Purpose::
Sic Raw Material Synthesis Furnace
Dimensions (L × W × H)::
4000 X 3400 X 4300 Mm Or Customize
Loading Capacity::
50kg
Heating Method::
Induction Heating
Maximum Furnace Temperature::
2400℃
Heating Power Supply::
2×40kW
Sic raw material synthesis furnace 50kg resistance preparation of high purity Sic crystal

 

Abstract of ZMSH SiC raw material synthesis furnace

 

Sic raw material synthesis furnace 50kg resistance preparation of high purity Sic crystal

 


 

Silicon carbide raw material synthesis furnace is a kind of equipment specially used for preparing high purity silicon carbide (SiC) raw material. As an important semiconductor and ceramic material, silicon carbide is widely used in power electronics, high temperature devices, wear-resistant materials and optical devices. Synthesis furnace converts silicon (Si) and carbon (C) raw materials into silicon carbide through high-temperature chemical reaction, and is a key equipment in the silicon carbide industry chain.

 

 

Sic raw material synthesis furnace 50kg resistance preparation of high purity Sic crystal 0

 

 


 

Characteristics of SiC raw material synthesis furnace

 

- High temperature capacity: It can provide a high temperature environment above 1600°C to meet the needs of silicon carbide synthesis.

 

- High purity synthesis: Through high purity raw materials and inert atmosphere control, high purity silicon carbide is synthesized.

 

- High stability: The equipment structure is stable, suitable for long-term continuous work.

 

- Low pollution: high purity materials and inert atmosphere are used to reduce the impact of impurities on synthetic raw materials.

 

 


 

Technical specifications

 

Specification Details
Dimensions (L × W × H) 4000 x 3400 x 4300 mm or customize
Furnace chamber diameter  1100mm
Loading capacity  50kg
The limit vacuum degree 10-2Pa(2h after the molecular pump starts)
Chamber pressure rise rate ≤10Pa/h(after calcination)
Lower furnace cover lifting stroke 1500mm
Heating method Induction heating
The maximum temperature in the furnace  2400°C
Heating power supply  2X40kW
Temperature measurement Two-color infrared temperature measurement
Temperature range  900~3000℃
Temperature control accuracy ±1°C
Control pressure range 1~700mbar
Pressure Control Accuracy 1~5mbar ±0.1mbar;
5~100mbar ±0.2mbar;
100~700mbar ±0.5mbar
Loading method Lower loading;
Optional configuration Double temperature measuring point, unloading forklift.

 

 


 

Design advantage

 

1. A large amount of loading, can achieve 1 equipment to multiple long crystal furnace, improve production efficiency;
2. Using 1 to 2 power supply with the same frequency, can effectively control the axial temperature gradient;
3. The top and bottom can be equipped with infrared temperature measurement, which is convenient for temperature field monitoring and process debugging;
4. High vacuum, high pressure control accuracy, high temperature control accuracy, to meet the synthesis of high purity silicon carbide raw materials:
5. Adopt the loading and unloading mode, which is safe and reliable, and can be configured with unloading forklift;
6. Using high-precision butterfly valve and mass flowmeter to control the pressure in the furnace, providing a stable process atmosphere;
7. The equipment can be arranged side by side, saving space and improving plant utilization.

 

 

Sic raw material synthesis furnace 50kg resistance preparation of high purity Sic crystal 1

 

 


 

The effect of SiC raw material synthesis furnace

 

The use of silicon carbide raw material synthesis furnace can efficiently prepare high-purity silicon carbide raw materials, the purity of up to 99.999% or more, to meet the stringent requirements of the semiconductor industry for materials. The synthetic silicon carbide raw material is used to grow high-quality single crystals and manufacture power devices (such as MOSFETs and diodes) with high voltage, low loss and high frequency characteristics, significantly improving the performance of electric vehicles, solar inverters and other applications. In addition, the synthesized silicon carbide powder can also be used in high-performance ceramics and optical devices, further expanding its application range.

 

 

Sic raw material synthesis furnace 50kg resistance preparation of high purity Sic crystal 2

 

 


 

ZMSH service

 

ZMSH provides full process services from the design and manufacture of the silicon carbide feedstock synthesis furnace to after-sales support, including equipment customization, process optimization and technical training. With advanced technology and rich industry experience, we ensure high efficiency, stability and low energy consumption of equipment, while providing fast response and all-weather technical support to help customers achieve large-scale production of high-quality silicon carbide raw materials.

 

 


 

Q&A​

 

1. Q: What is a silicon carbide raw material synthesis furnace used for?
     A: It is used to produce high-purity silicon carbide (SiC) raw materials through high-temperature reactions, essential for manufacturing semiconductors, ceramics, and optical devices.

 

 

2. Q: Why is a silicon carbide synthesis furnace important for semiconductor production?
     A: It enables the production of ultra-pure SiC raw materials, which are critical for growing high-quality SiC crystals used in power electronics and high-frequency devices.


 


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