Product Details
Place of Origin: CHINA
Brand Name: ZMSH
Certification: rohs
Model Number: Sic raw material synthesis furnace
Payment & Shipping Terms
Minimum Order Quantity: 1
Price: by case
Delivery Time: 5-10months
Payment Terms: T/T
Purpose:: |
Sic Raw Material Synthesis Furnace |
Dimensions (L × W × H):: |
4000 X 3400 X 4300 Mm Or Customize |
Loading Capacity:: |
50kg |
Heating Method:: |
Induction Heating |
Maximum Furnace Temperature:: |
2400℃ |
Heating Power Supply:: |
2×40kW |
Purpose:: |
Sic Raw Material Synthesis Furnace |
Dimensions (L × W × H):: |
4000 X 3400 X 4300 Mm Or Customize |
Loading Capacity:: |
50kg |
Heating Method:: |
Induction Heating |
Maximum Furnace Temperature:: |
2400℃ |
Heating Power Supply:: |
2×40kW |
Silicon carbide raw material synthesis furnace is a kind of equipment specially used for preparing high purity silicon carbide (SiC) raw material. As an important semiconductor and ceramic material, silicon carbide is widely used in power electronics, high temperature devices, wear-resistant materials and optical devices. Synthesis furnace converts silicon (Si) and carbon (C) raw materials into silicon carbide through high-temperature chemical reaction, and is a key equipment in the silicon carbide industry chain.
- High temperature capacity: It can provide a high temperature environment above 1600°C to meet the needs of silicon carbide synthesis.
- High purity synthesis: Through high purity raw materials and inert atmosphere control, high purity silicon carbide is synthesized.
- High stability: The equipment structure is stable, suitable for long-term continuous work.
- Low pollution: high purity materials and inert atmosphere are used to reduce the impact of impurities on synthetic raw materials.
Specification | Details |
---|---|
Dimensions (L × W × H) | 4000 x 3400 x 4300 mm or customize |
Furnace chamber diameter | 1100mm |
Loading capacity | 50kg |
The limit vacuum degree | 10-2Pa(2h after the molecular pump starts) |
Chamber pressure rise rate | ≤10Pa/h(after calcination) |
Lower furnace cover lifting stroke | 1500mm |
Heating method | Induction heating |
The maximum temperature in the furnace | 2400°C |
Heating power supply | 2X40kW |
Temperature measurement | Two-color infrared temperature measurement |
Temperature range | 900~3000℃ |
Temperature control accuracy | ±1°C |
Control pressure range | 1~700mbar |
Pressure Control Accuracy | 1~5mbar ±0.1mbar; 5~100mbar ±0.2mbar; 100~700mbar ±0.5mbar |
Loading method | Lower loading; |
Optional configuration | Double temperature measuring point, unloading forklift. |
1. A large amount of loading, can achieve 1 equipment to multiple long crystal furnace, improve production efficiency;
2. Using 1 to 2 power supply with the same frequency, can effectively control the axial temperature gradient;
3. The top and bottom can be equipped with infrared temperature measurement, which is convenient for temperature field monitoring and process debugging;
4. High vacuum, high pressure control accuracy, high temperature control accuracy, to meet the synthesis of high purity silicon carbide raw materials:
5. Adopt the loading and unloading mode, which is safe and reliable, and can be configured with unloading forklift;
6. Using high-precision butterfly valve and mass flowmeter to control the pressure in the furnace, providing a stable process atmosphere;
7. The equipment can be arranged side by side, saving space and improving plant utilization.
The use of silicon carbide raw material synthesis furnace can efficiently prepare high-purity silicon carbide raw materials, the purity of up to 99.999% or more, to meet the stringent requirements of the semiconductor industry for materials. The synthetic silicon carbide raw material is used to grow high-quality single crystals and manufacture power devices (such as MOSFETs and diodes) with high voltage, low loss and high frequency characteristics, significantly improving the performance of electric vehicles, solar inverters and other applications. In addition, the synthesized silicon carbide powder can also be used in high-performance ceramics and optical devices, further expanding its application range.
ZMSH provides full process services from the design and manufacture of the silicon carbide feedstock synthesis furnace to after-sales support, including equipment customization, process optimization and technical training. With advanced technology and rich industry experience, we ensure high efficiency, stability and low energy consumption of equipment, while providing fast response and all-weather technical support to help customers achieve large-scale production of high-quality silicon carbide raw materials.
1. Q: What is a silicon carbide raw material synthesis furnace used for?
A: It is used to produce high-purity silicon carbide (SiC) raw materials through high-temperature reactions, essential for manufacturing semiconductors, ceramics, and optical devices.
2. Q: Why is a silicon carbide synthesis furnace important for semiconductor production?
A: It enables the production of ultra-pure SiC raw materials, which are critical for growing high-quality SiC crystals used in power electronics and high-frequency devices.
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