Product Details
Place of Origin: CHINA
Brand Name: ZMSH
Certification: rohs
Model Number: Silicon carbide resistance long crystal furnace
Payment & Shipping Terms
Minimum Order Quantity: 1
Price: by case
Delivery Time: 5-10months
Payment Terms: T/T
Purpose:: |
For 6 8 12inch SiC Single Crystal Growth Furnace |
Dimensions (L × W × H):: |
2500 × 2400 × 3456 Mm Or Customize |
Pressure Range:: |
1–700 Mbar |
Temperature Range:: |
900–3000°C |
Maximum Furnace Temperature:: |
2500°C |
Rotation Shaft Diameter:: |
50 Mm |
Purpose:: |
For 6 8 12inch SiC Single Crystal Growth Furnace |
Dimensions (L × W × H):: |
2500 × 2400 × 3456 Mm Or Customize |
Pressure Range:: |
1–700 Mbar |
Temperature Range:: |
900–3000°C |
Maximum Furnace Temperature:: |
2500°C |
Rotation Shaft Diameter:: |
50 Mm |
Silicon carbide resistance crystal furnace is a kind of equipment specially used for growing silicon carbide (SiC) crystals. As a kind of wide band gap semiconductor material, silicon carbide has excellent properties such as high thermal conductivity, high breakdown electric field and high electron saturation drift speed, and is widely used in power electronics, radio frequency devices and high temperature semiconductors. Resistive long crystal furnace provides high temperature environment through resistive heating, which is the key equipment to realize the growth of silicon carbide crystal.
· High temperature capacity: It can provide a high temperature environment above 2000°C to meet the needs of silicon carbide crystal growth.
· High precision temperature control: The temperature control accuracy can reach ±1°C to ensure the quality of crystal growth.
· High stability: The resistance heating method is stable and reliable, suitable for long-term continuous work.
· Low pollution: high purity materials and inert atmosphere are used to reduce the influence of impurities on crystal quality.
| Specification | Details |
|---|---|
| Dimensions (L × W × H) | 2500 × 2400 × 3456 mm or customize |
| Crucible Diameter | 900 mm |
| Ultimate Vacuum Pressure | 6 × 10⁻⁴ Pa (after 1.5h of vacuum) |
| Leakage Rate | ≤5 Pa/12h (bake-out) |
| Rotation Shaft Diameter | 50 mm |
| Rotation Speed | 0.5–5 rpm |
| Heating Method | Electric resistance heating |
| Maximum Furnace Temperature | 2500°C |
| Heating Power | 40 kW × 2 × 20 kW |
| Temperature Measurement | Dual-color infrared pyrometer |
| Temperature Range | 900–3000°C |
| Temperature Accuracy | ±1°C |
| Pressure Range | 1–700 mbar |
| Pressure Control Accuracy | 1–10 mbar: ±0.5% F.S; 10–100 mbar: ±0.5% F.S; 100–700 mbar: ±0.5% F.S |
| Operation Type | Bottom loading, manual/automatic safety options |
| Optional Features | Dual temperature measurement, multiple heating zones |
Growth result
Using advanced physical vapor transfer (PVT), the SiC resistance growth furnace can precisely control the crystal growth conditions at high temperatures to ensure the growth of high-quality, low-defect silicon carbide single crystals. The equipment has the characteristics of high precision temperature control (±1°C), high efficiency and energy saving, stable and reliable, suitable for long-term continuous operation. The equipment provided by ZMSH is also equipped with an intelligent monitoring system that adjusts growth parameters in real time to further improve crystal consistency and yield to meet the semiconductor industry's demanding requirements for high-performance crystals.
Production standard semiconductor
ZMSH has many years of technology accumulation in the field of SiC resistance growth furnaces, providing one-stop services from equipment design and manufacturing to after-sales support. Our devices not only meet semiconductor industry standards, but are also optimized for applications such as power electronics, RF devices and new energy to ensure superior crystal performance in high temperature, high frequency and high power scenarios.
ZMSH focuses on providing high-performance SiC resistance growth furnaces and supporting services, including equipment customization, process optimization and technical support. With many years of industry experience, we ensure the high precision temperature control, stability and energy efficiency of the equipment to meet the semiconductor industry's demand for high-quality silicon carbide crystals. ZMSH's strength lies in fast delivery, customized solutions and 24/7 after-sales service, providing customers with comprehensive support from equipment installation to crystal growth process optimization, helping customers to lead in power electronics, RF devices and other fields.
1. Q: What is a SiC resistance furnace used for?
A: A SiC resistance furnace is used for growing high-quality silicon carbide (SiC) crystals through the Physical Vapor Transport (PVT) method, essential for power electronics and semiconductor applications.
2. Q: Why choose a SiC resistance furnace for crystal growth?
A: A SiC resistance furnace offers precise temperature control, high stability, and energy efficiency, making it ideal for producing low-defect, high-purity SiC crystals required for advanced semiconductor devices.
Tag: #Silicon carbide resistance long crystal furnace, #SIC, #High temperature resistance heating, #Ingot, #6/8/12 inch SIC crystal growth, #SIC boule
Video
Video
