Product Details
Place of Origin: CHINA
Brand Name: ZMSH
Certification: rohs
Model Number: Sapphire crystal furnace kyropoulos
Payment & Shipping Terms
Minimum Order Quantity: 1
Price: by case
Payment Terms: T/T
Melting Capacity:: |
≥200kg |
Heater Power:: |
120KW |
Maximum Heating Temperature:: |
2100℃ |
Output Working Current:: |
0-10000A DC |
Melting Capacity:: |
≥200kg |
Heater Power:: |
120KW |
Maximum Heating Temperature:: |
2100℃ |
Output Working Current:: |
0-10000A DC |
Sapphire ky crystallization furnace kyropoulos foam process Large size crystal growth equipment for LED substrate
Kyropoulos bubble method (Ky method for short) is a melt growth method by dipping seed crystals into molten sapphire melt and taking them out at a controlled rate when the crucible and crystal are reversed, repeatedly adding layers to form crystals. This method can grow high quality, low defect density, large size sapphire crystal, and is widely used in LED substrate and other fields.
| Melting amount: | ≥200kg |
| Furnace cavity height: | Φ800×1200mm |
| Single crystal pulling speed range: | 0.1 ~ 20mm/h stepless speed regulation |
| Fast rise/fall of seed crystal: | 0-150mm/min stepless speed regulation |
| Seed speed range: | 1 ~ 20r/min stepless speed regulation |
| Maximum lifting stroke of seed crystal shaft: | 400mm |
| Heater power: | 120KW |
| Maximum heating temperature: | 2100℃ |
| Power supply (incoming line) : | 3-phase 380V |
| Output working current: | 0-10000A DC |
| Output working voltage: | 0-12.5V DC |
| Maximum height of the host: | 2800mm |
| Limit vacuum of furnace chamber: | ≤6.7×10-3 Pa |
| Double load cell: | 100Kg(single) |
| Weight: | about 1500Kg |
| Machine weight: | about 2000Kg |
| Main machine area: | 3800×2100mm |
| The machine covers an area of: | 4000×3100mm |
| Inlet pressure: | 0.3MPa±0.02MPa |
| Water inlet temperature: | 20 ~ 25℃ |
The core of Kyropoulos method lies in thermal field design and seed control. By heating the high purity aluminum oxide raw material in the crucible, the equipment makes it melt and forms a temperature distribution mode of high temperature in the upper part and low temperature in the lower part. The seed crystals grow from the center of the melt surface, with the seed crystals as the core, and the melt crystallizes layer by layer from the crucible to the crystal wall, finally forming a single crystal.
Product structure and characteristics
1. Thermal field design: including crucible, thermal protection layer, upper seed heat exchanger and crucible support body, etc., to ensure uniform crystallization of melt.
2. Seed crystal control: By precisely controlling the temperature gradient and pulling speed of the seed crystal, high-quality crystal growth is achieved.
3. Automation system: Modern equipment is usually equipped with automatic planting system and automatic control system, which can produce efficiently.
1. High-quality crystal: Ky method can grow low defect density, large size sapphire crystal, to meet the LED industry's demand for high-quality substrate.
2. Relatively low cost: Compared with other methods (such as Czochralski method), Ky method has low operational complexity and relatively controllable cost.
3. Technological innovation: The improved Ky method (IKY) further improves the crystal yield and reduces the production cost by optimizing the seed and neck pulling technology.
Kyropoulos bubble process equipment is widely used in the following fields:
1. LED industry: Used to produce high-quality sapphire substrate to meet the needs of LED chip manufacturing.
2. Infrared military devices: Sapphire is widely used in infrared window materials because of its excellent optical properties.
3. Satellite space technology: Sapphire is used as a key material in satellite technology.
4. Laser window material: Used for high-performance laser window material.
Kyropoulos crystal growth equipment with its high efficiency, low cost and high quality, in the field of sapphire crystal growth occupies an important position, and is widely used in many high-tech fields.
1. Q: What are the core advantages of sapphire crystallization furnace (Kyropoulos blister method) compared with other crystal growth methods?
A: 1. No need to continuously pull the seed crystal: in the equal diameter growth stage, the crystal is crystallized by natural cooling, without relying on mechanical lifting, reducing mechanical disturbances and defects.
2. Suitable for large size crystals: it can grow 85-120 kg sapphire single crystal to meet industrial mass production needs, such as LED substrate and optical window applications.
3. High yield and low defect: Optimized thermal field design (such as segmented heaters and multi-layer heat shield), reduce dislocation density (<1000/cm²), and yield more than 75%.
4. Energy saving and automation: fully enclosed vacuum chamber and double-layer water cooling structure reduce energy loss, combined with PLC control system to achieve automated operation and reduce manual intervention.
2. Q: What is the essential difference between the working principle of the bubble method equipment and the traditional lifting method (such as Czochralski method)?
A: 1. Growth stage difference: lifting method: the whole process needs to mechanically lift the seed crystal, and crystal growth is achieved by controlling the lifting speed, which is easy to cause defects due to mechanical vibration. Bubble growth method: only in the necking stage to pull the seed crystal, the equal diameter stage depends on the temperature gradient natural growth, reduce stress and improve crystal uniformity.
2. Thermal field control: The bubble growth method adopts dual temperature zone independent heating (side heating body + bottom heating body), accurately regulates axial and radial temperature gradients, and prevents bubbles and cracks. The lifting rule relies on a single heating source, and the temperature gradient is fixed, which is difficult to adapt to the growth of large crystals.
3. Application scenario: The bubble method is more suitable for large size, high purity crystals (such as sapphire, calcium fluoride), while the Tila method is mostly used for silicon, germanium and other conventional semiconductor materials.
Tag: #Sapphire crystal furnace, #Kyropoulos bubble growth method, #Ky growth equipment, #Sapphire crystal production, #Sapphire wafer, #Large size crystal growth equipment, #LED substrate
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