Product Details
Place of Origin: CHINA
Brand Name: ZMSH
Certification: rohs
Model Number: Automatic double cavity fast annealing furnace
Payment & Shipping Terms
Minimum Order Quantity: 1
Price: by case
Payment Terms: T/T
Temperature Range:: |
1300℃ |
Heating Rate:: |
Up To 100°C/ S |
Degree Of Automation:: |
Fully Automatic Control System |
Application:: |
SIC,GaN And Other Third Generation Semiconductor Field |
Temperature Range:: |
1300℃ |
Heating Rate:: |
Up To 100°C/ S |
Degree Of Automation:: |
Fully Automatic Control System |
Application:: |
SIC,GaN And Other Third Generation Semiconductor Field |
Product Description
The automatic double chamber rapid annealing furnace is a high-precision heat treatment equipment designed for semiconductor materials, which uses a double chamber structure to achieve an efficient and uniform rapid heating and cooling process. In the semiconductor materials industry, the device is mainly used for heat treatment processes of wafers, compound semiconductors (such as GaN, SiC) and thin film materials, optimizing the electrical and structural properties of materials through precise control of temperature and time, improving device performance and yield.
Equipment specification
1. Temperature range: room temperature to 1300°C (higher temperature can be customized).
2. Heating rate: up to 100°C/ s.
3. Number of chambers: Dual chamber design, support parallel processing, improve production efficiency.
4. Atmosphere control: Support nitrogen, argon, hydrogen and other atmospheres to meet different process requirements.
5. Uniformity: Temperature field uniformity ≤±1°C to ensure the uniformity of material treatment.
6. Degree of automation: automatic control system, support process parameter presetting and remote monitoring.
Main process application
· Silicon-based semiconductors: Used for rapid thermal annealing (RTA) of silicon wafers to activate doped ions and repair lattice defects.
· Compound semiconductor: It is suitable for heat treatment of GaN, SiC and other wide band gap semiconductor materials to improve crystal quality and interface characteristics.
· Film material: Used for annealing of metal film and oxide film (such as high k medium) to optimize the conductivity and stability of the film.
· Ion implantation/contact annealing
· High temperature annealing
· High temperature diffusion
· Metal alloys
· Thermal oxidation treatment
Main application field
- Wafer fabrication: for doping activation, oxide annealing and metallization annealing and other key processes.
- Power device: Suitable for heat treatment of SiC, GaN and other power semiconductor devices to improve device performance and reliability.
- Advanced packaging: for thermal annealing in TSV (through-silicon) and RDL (Redistributed layer) processes.
- Photoelectric materials: suitable for the annealing process of LED, laser and other photoelectric materials, optimize the luminous efficiency and wavelength consistency.
Our services
XKH provides customized services for fully automatic double chamber rapid annealing furnaces, including equipment specification adjustment, process parameter optimization and technical support to ensure that the equipment meets the specific needs of customers. In addition, XKH provides installation training, regular maintenance and process upgrade services to help customers maximize equipment performance and production efficiency, contributing to the high-quality development of semiconductor material processing.
Tag: #Automatic double cavity semiconductor fast annealing furnace, #compatible with 6inch 8inch 12inch wafer, #high-speed electric machine, #heat treatment equipment, #SIC, #GaN