Product Details
Place of Origin: China
Brand Name: ZMSH
Model Number: Si wafer
Payment & Shipping Terms
Delivery Time: 4-6 weeks
Payment Terms: T/T
Material: |
Si Single Crystal |
Size: |
4 Inch |
Thickness: |
350 Um |
Crystal Orientation: |
<100> |
Density: |
2.4 G/cm3 |
Doping Type: |
P Type Or N Type |
Material: |
Si Single Crystal |
Size: |
4 Inch |
Thickness: |
350 Um |
Crystal Orientation: |
<100> |
Density: |
2.4 G/cm3 |
Doping Type: |
P Type Or N Type |
Si wafer, Silicon Wafer, Si Substrate, Silicon Substrate, <100>, <110>, <111>, 1inch Si wafer, 2inch Si wafer, 3inch Si wafer, 4inch Si wafer, Si monocrystalline substrate, Silicon monocrystalline wafer
Character of the Si wafer
- use Silicon Monocrystals to make, with high purity, 99.999%
- support customized ones with design artwork
- resistivity varies greatly by the doped type
- can be either P-type (with boron) or N-type (with phosphorus or arsenic)
- widely used in high-tech areas, like ICs, photovoltaics and MEMS devices
Description of the Si wafer
Silicon wafers are thin, flat disks made from highly purified single-crystal silicon and are widely used in the semiconductor industry.
These wafers are the basic substrate for manufacturing integrated circuits and a variety of electronic devices.
Silicon wafers typically range from 2 inches (50 mm) to 12 inches (300 mm) in diameter, and their thickness varies depending on size, typically between 200 µm and 775 µm.
Silicon wafers are manufactured using the Czochralski or Float-Zone methods and are carefully polished to obtain a mirror surface with minimal roughness. They can be doped with elements such as boron (P-type) or phosphorus (N-type) to modify their electrical properties.
Key properties include high thermal conductivity, low coefficient of thermal expansion, and excellent mechanical strength.
Wafers can also have epitaxial layers or thin silicon dioxide layers to enhance electrical properties and insulation.
They are processed and handled in a cleanroom environment to maintain purity, ensuring high yield and reliability in semiconductor manufacturing.
More about the Si wafer
| Growth method | Czochralski(CZ), floating zone(FZ) | ||
| Crystal structure | Cubic | ||
| Band gap | 1.12 eV | ||
| Density | 2.4 g/cm3 | ||
| Melting point | 1420℃ | ||
| Dopant type | Undoped | Boron-doped | Phos-doped / As-doped |
| ConductiveType | Intrinsic | P-type | N-type |
| Resistivity | >1000 Ωcm | 0.001~100 Ωcm | 0.001~100 Ωcm |
| EPD | <100 /cm2 | <100/cm2 | <100/cm2 |
| Oxygen content | ≤1x1018 /cm3 | ||
| Carbon content | ≤5x1016 /cm3 | ||
| Thickness | 150um, 200um, 350um, 500um or others | ||
| Polishing | Single-side polished or Double-side polished | ||
| Crystal orientation | <100>, <110>, <111> ±0.5º or other off-angle | ||
| Surface roughness | Ra≤5Å(5µmx5µm) | ||
Samples of the Si wafer
*If you have any other requirements, please feel free to contact us to customize one.
1. Q: What difference between P-type and N-type of Si wafers?
A: P-type silicon wafers have holes as the main charge carriers, while N-type wafers have electrons, with minimal differences in other physical properties like resistivity.
2. Q: Si wafer, SiO2 wafer and SiC wafer, what are the main differences of them?
A: Silicon (Si) wafers are pure silicon substrates used primarily in semiconductor devices,
SiO₂ wafers have a silicon dioxide layer on the surface, often used as an insulating layer.
Silicon carbide (SiC) wafers are composed of a compound of silicon and carbon, offering higher thermal conductivity and durability, making them suitable for high-power and high-temperature applications.
