Product Details
Place of Origin: CHINA
Brand Name: TANKBLUE
Certification: CE
Model Number: 4h-n
Payment & Shipping Terms
Minimum Order Quantity: 3PCS
Price: by size and grade
Packaging Details: single wafer container box or 25pc cassette box
Delivery Time: 1-4weeks
Payment Terms: T/T, Western Union
Supply Ability: 1000pc/month
Materials: |
SIC Crystal |
Type: |
4h-n |
Purity: |
99.9995% |
Resistivity: |
0.015~0.028ohm.cm |
Size: |
2-8inch 2inch, 3inch ,4inch ,6inch ,8inch |
Thickness: |
350um Or Customized |
MPD: |
《2cm-2 |
Application: |
For SBD, MOS Device |
TTV: |
《15um |
Bow: |
《25um |
Warp: |
《45um |
Surface: |
Si-face CMP, C-face MP |
Materials: |
SIC Crystal |
Type: |
4h-n |
Purity: |
99.9995% |
Resistivity: |
0.015~0.028ohm.cm |
Size: |
2-8inch 2inch, 3inch ,4inch ,6inch ,8inch |
Thickness: |
350um Or Customized |
MPD: |
《2cm-2 |
Application: |
For SBD, MOS Device |
TTV: |
《15um |
Bow: |
《25um |
Warp: |
《45um |
Surface: |
Si-face CMP, C-face MP |
2inch 4inch 6inch 8Inch Silicon Carbide Wafer Sic Wafers Dummy Research Prime Grade
Specification
Advantages of Silicon Carbide
Hardness
There are numerous advantages to using silicon carbide over more traditional silicon substrates. One of the major advantages is its hardness. This gives the material many advantages, in high speed, high temperature and/or high voltage applications.
Silicon carbide wafers have high thermal conductivity, which means they can transfer heat from one point to another well. This improves its electrical conductivity and ultimately miniaturization, one of the common goals of switching to SiC wafers.
Thermal capabilities
High resistance to thermal shock. This means they have the ability to change temperatures rapidly without breaking or cracking. This creates a clear advantage when fabricating devices as it is another toughness characteristic that improves the lifetime and performance of silicon carbide in comparison to traditional bulk silicon.
Industrial chain
The silicon carbide SiC industrial chain is divided into substrate material preparation, epitaxial layer growth, device manufacturing and downstream applications. Silicon carbide monocrystals are usually prepared by physical vapor transmission (PVT method), and then epitaxial sheets are generated by chemical vapor deposition (CVD method) on the substrate, and the relevant devices are finally made. In the industrial chain of SiC devices, due to the difficulty of substrate manufacturing technology, the value of the industrial chain is mainly concentrated in the upstream substrate link.
ZMSH company provides provides 100mm and 150mm SiC wafers. With its hardness (SiC is the second hardest material in the world) and stability under heat and high voltage current, this material is being widely used in several industries.
Related product:GaAs wafer
Application
Silicon carbide (SiC) wafers, available in various diameters such as 2-inch, 4-inch, 6-inch, and 8-inch, are utilized across a range of applications due to their superior electrical, thermal, and mechanical properties. These wafers are categorized into different grades such as dummy, research, and prime grade, each serving specific purposes in industries like power electronics, optoelectronics, and semiconductors.
Prime Grade SiC Wafers: These are used in the production of high-performance power devices, including MOSFETs, diodes, and IGBTs, essential for energy-efficient applications such as electric vehicles, solar inverters, and power grids. SiC’s ability to operate at high temperatures and voltages makes it ideal for such demanding environments.
Research Grade SiC Wafers: Primarily used in laboratories and universities for developing new semiconductor materials and devices. Researchers study SiC's potential to enhance the performance of various electronic components, such as in the development of more efficient high-frequency or high-voltage devices.
Dummy Grade SiC Wafers: Used in fabrication processes for calibration, equipment testing, and system alignment, they help optimize production conditions without risking valuable prime-grade materials.
Silicon carbide’s hardness, thermal conductivity, and chemical stability also make it an excellent substrate material in LED production and high-power radiofrequency applications, highlighting its versatility in cutting-edge technology.
FAQ
Q: What's the wayof shipping and cost and pay term ?
A:(1) We accept 50％ T/T In advance and left 50% before delivery by DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we could help you ship them.
Freight is in accordance with the actual settlement.
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 3pcs.
(2) For customized products, the MOQ is 10pcs up.
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and shape, size based on your needs.
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 or 3 weeks after you place the order.
(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.
