Product Details
Place of Origin: CHINA
Brand Name: ZMSH
Certification: rohs
Model Number: SiC 6H-P
Payment & Shipping Terms
Price: by case
Payment Terms: T/T
Supply Ability: 1000pc/month
Polytype: |
6H-P |
Density: |
3.0 G/cm3 |
Resistivity: |
≤0.1 Ω.cm |
Surface Orientation: |
Off Axis: 2.0° Toward [110] ± 0.5° |
Roughness: |
Polish Ra≤1 Nm |
Edge Exclusion: |
3 Mm |
Packaging: |
Multi-wafer Cassette Or Single Wafer Container |
Application: |
Microwave Amplifier, Antenna |
Polytype: |
6H-P |
Density: |
3.0 G/cm3 |
Resistivity: |
≤0.1 Ω.cm |
Surface Orientation: |
Off Axis: 2.0° Toward [110] ± 0.5° |
Roughness: |
Polish Ra≤1 Nm |
Edge Exclusion: |
3 Mm |
Packaging: |
Multi-wafer Cassette Or Single Wafer Container |
Application: |
Microwave Amplifier, Antenna |
Type 6H-P Sic is made of advanced semiconductor material preparation process with specific crystal structure and doping type. Among them, "6H" represents the crystal structure type of silicon carbide, which belongs to a hexagonal crystal system; "P-type" indicates that the substrate is doped so that the holes become the main carrier type. The design with an off-axis Angle of 2.0° helps to optimize the performance of the crystal in a specific direction to meet the needs of specific application scenarios.
1. High doping concentration: 6H-P type Sic achieves a high concentration of hole carrier distribution through a specific doping process, which helps to improve the electrical conductivity and switching speed of the device.
2. Low resistivity: Due to the high doping concentration, the substrate exhibits low resistivity, which helps to reduce the energy loss of the device during operation.
3. Good thermal stability: Sic material itself has a very high melting point, making 6H-P substrate can maintain stable performance in high temperature environment.
4. Excellent mechanical properties: Sic material has high hardness, wear resistance and other characteristics, making 6H-P substrate can withstand greater mechanical stress in the manufacturing process.
5. Off-axis Angle optimization: The design of the off-axis Angle is 2.0°, so that the performance of the substrate is optimized in a specific direction, which helps to improve the overall performance of the device.
2 inch diameter Silicon Carbide (SiC) Substrate Specification
|
等级 Grade |
工业级 Production Grade (P Grade) |
研究级 Research Grade (R Grade) |
试片级 Dummy Grade (D Grade) |
||
| 直径 Diameter | 50.8mm±0.38mm | ||||
| 厚度 Thickness | 350 μm±25 μm | ||||
| 晶片方向 Wafer Orientation | Off axis: 2.0°-4.0°toward [1120] ± 0.5° for 4H/6H-P, On axis:〈111〉± 0.5° for 3C-N | ||||
| 微管密度 Micropipe Density | 0 cm-2 | ||||
| 电阻率 ※Resistivity | 4H/6H-P | ≤0.1 Ω.cm | |||
| 3C-N | ≤0.8 mΩ•cm | ||||
| 主定位边方向 Primary Flat Orientation | 4H/6H-P | {10-10} ±5.0° | |||
| 3C-N | {1-10} ±5.0° | ||||
| 主定位边长度 Primary Flat Length | 15.9 mm ±1.7 mm | ||||
| 次定位边长度 Secondary Flat Length | 8.0 mm ±1.7 mm | ||||
| 次定位边方向 Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | ||||
| 边缘去除 Edge Exclusion | 3 mm | 3 mm | |||
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ||||
| 表面粗糙度※ Roughness | Polish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | |||||
| 边缘裂纹(强光灯观测) Edge Cracks By High Intensity Light | None | 1 allowed, ≤1 mm | |||
| 六方空洞(强光灯观测) ※ Hex Plates By High Intensity Light | Cumulative area≤1 % | Cumulative area≤3 % | |||
| 多型(强光灯观测) ※ Polytype Areas By High Intensity Light | None | Cumulative area≤2 % | Cumulative area≤5% | ||
|
Si 面划痕(强光灯观测)# Silicon Surface Scratches By High Intensity Light |
3 scratches to 1×wafer diameter cumulative length |
5 scratches to 1×wafer diameter cumulative length |
8 scratches to 1×wafer diameter cumulative length | ||
| 崩边(强光灯观测) Edge Chips High By Intensity Light light | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | ||
|
硅面污染物(强光灯观测) Silicon Surface Contamination By High Intensity |
None | ||||
| 包装 Packaging | Multi-wafer Cassette or Single Wafer Container | ||||
Notes:
※Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.
1. Q: What is Sic 6H-P off-axis to 2.0°?
A: Sic 6H-P off-axis to 2.0° refers to a P-type silicon carbide material with a 6H crystal structure, and its cutting direction deviates from the crystal spindle by 2.0°. This design is designed to optimize specific properties of silicon carbide materials, such as increasing carrier mobility and reducing defect density, to meet the manufacturing needs of high-performance semiconductor devices.
2. Q: What is the difference between P-type and N-type silicon wafers?
A: The main difference between P-type silicon wafers and N-type silicon wafers is that the doping elements are different, P-type boron and N-type phosphorus, resulting in their electrical conductivity and physical properties are different.
Tag: #Sic wafer, #silicon carbide substrate, #Sic 6H-P type, #Off axis: 2.0° toward, #Mohs Hardness 9.2
