Product Details
Place of Origin: Shanghai China
Brand Name: ZMSH
Certification: ROHS
Model Number: Silicon Carbide Wafer
Payment & Shipping Terms
Price: by case
Payment Terms: T/T
Material: |
SiC Single Crystal 4H-N |
Grade: |
P/D/R Grade |
Color: |
Green |
Diameter: |
12 Inch |
Material: |
SiC Single Crystal 4H-N |
Grade: |
P/D/R Grade |
Color: |
Green |
Diameter: |
12 Inch |
12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H Type Conductive Solar Photovoltaic
12 inch SiC substrate (12-inch SiC substrate) is a large silicon carbide (SiC) wafer, mainly used in the manufacture of high-performance semiconductor devices. Silicon carbide is a wide bandgap semiconductor material with excellent physical and chemical properties, suitable for high power, high frequency and high temperature applications. It has a wide range of applications in power electronics, radio frequency devices, new energy vehicles, industrial applications and other fields, while bringing significant economic and environmental benefits to the semiconductor industry by improving production efficiency, reducing costs and driving technological progress. With the continuous development of silicon carbide technology, 12 inch substrates will occupy an important position in the future market. The introduction of the 12 inch substrate marks a major breakthrough in the size and capacity of silicon carbide technology to meet the growing market demand.
| Diameter | 300.0 mm+0mm/-0.5mm |
| Surface Orientation | 4°toward<11-20>±0.5° |
| Primary Flat Length | Notch |
| Secondary Flat Length | None |
| Notch Orientation | <1-100>±1° |
| Notch Angle | 90°+5/-1° |
| Notch Depth | 1mm+0.25mm/-0mm |
| Orthogonal Misorientation | ±5.0° |
| Surface Finish | C-Face:Optical Polish,Si-Face:CMP |
| Wafer Edge | Beveling |
| Surface Roughness (10μm×10μm) |
Si-Face:Ra≤0.2 nm C-Face:Ra≤0.5 nm |
| Thickness | 500.0μm±25.0μm |
| LTV(10mmx10mm) | ≤3μm |
| TTV | ≤10μm |
| BOW | ≤25μm |
| Warp | ≤40μm |
| Surface Parameters | |
| Chips/Indents | None permitted≥0.5mm Width and Depth |
| Scratches² (Si face CS8520) |
≤5 and Cumulative Length≤1 Wafer Diameter |
| TUA²(2mm*2mm) | ≥95% |
| Cracks | None Permitted |
| Stain | None Permitted |
| Edge Exclusion | 3mm |
1. Large size: 12 inch (300mm) diameter, compared with the traditional 6 inch (150mm) and 8 inch (200mm) substrate, greatly improving the chip output of a single wafer.
2. High crystal quality: The use of advanced crystal growth technology (such as physical vapor transfer method, PVT) to ensure that the substrate has low defect density and high uniformity.
Excellent physical properties:
1. High hardness (Mohs hardness 9.2, second only to diamond).
2. High thermal conductivity (about 4.9W /cm·K), suitable for high power device heat dissipation.
3. High breakdown electric field strength (about 2.8MV /cm), support high voltage applications.
4. Chemical stability: high temperature resistance, corrosion resistance, suitable for harsh environment.
5. Wide band gap: The band gap is 3.26 eV (4H-SiC), suitable for high temperature and high power applications.
1. Power electronics:
MOSFETs and IGBTs: Used in electric vehicles, industrial motor drives and renewable energy systems.
Schottky diodes: For high efficiency power conversion and power distribution systems.
2. Rf devices:
5G communication base station: supports high-frequency and high-power RF signal transmission.
Radar systems: Used in aerospace and defense.
3. New energy vehicles:
Electric drive system: improve the motor drive efficiency and endurance of electric vehicles.
Car charger: Supports fast charging and high power transmission.
4. Industrial applications:
High voltage power supply: used in industrial equipment and power systems.
Solar inverter: improve the conversion efficiency of solar power generation system.
5. Consumer Electronics:
Fast charging device: Support high power fast charging technology, shorten charging time.
High efficiency power adapter: Used for power management of devices such as laptops and mobile phones.
6. Aerospace:
High-temperature electronics: Power systems for aircraft and spacecraft, adapted to extreme environments.
1. Improve production efficiency: The 12-inch substrate area is 2.25 times that of the 8-inch substrate, and more chips can be produced in a single process, reducing the unit chip cost.Reduce edge losses and improve material utilization.
2. Reduce manufacturing costs: The large substrate size reduces equipment switching and process steps in the manufacturing process and optimizes the production flow.Large-scale production further reduces costs.
3. Improve device performance: High crystal quality and low defect density improve the reliability and performance of the device.Excellent physical properties support higher power and higher frequency applications.
4. Driving technological progress: The 12-inch substrate has promoted the large-scale application of silicon carbide semiconductor technology and accelerated industry innovation.
5. Environmental protection and energy saving: The efficient performance of silicon carbide devices reduces energy consumption and is in line with the trend of green manufacturing and sustainable development.
8inch SiC Wafer Silicon Carbide Wafer Prime Dummy Research Grade 500um 350 Um
ZMSH is a high-tech company focusing on semiconductor substrates and optical crystal materials, committed to research, production, processing and marketing of high-quality optoelectronic materials. We have an experienced engineering team with deep industry knowledge and technical expertise to provide customized solutions to our customers.
With strong research and development capabilities, advanced processing equipment, strict quality control and customer-oriented service philosophy, ZMSH is committed to providing customers with high-quality semiconductor substrates and optical crystal materials. We will continue to strive to become a leading enterprise in the field of optoelectronic materials and create greater value for customers.
1. Q: What are the key advantages of 12 inch SiC substrates over smaller sizes?
A: The key advantages of 12 inch SiC substrates include:
Cost Reduction: Larger wafers reduce the cost per chip due to higher yield and better material utilization.
Scalability: They enable mass production, which is critical for meeting the growing demand in industries like automotive and telecommunications.
Enhanced Performance: The larger size supports advanced manufacturing processes, leading to higher-quality devices with fewer defects.
Competitive Edge: Companies adopting 12 inch SiC technology can stay ahead in the market by offering more efficient and cost-effective solutions.
Tags: #12 inch SIC wafer, #Larger size, #Silicon carbide substrate, #4H-N Type, #Conductive, #Solar Photovoltaic, #12 inch SiC, #Large-diameter (300mm)
