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Silicon Carbide Wafer Sic Substrate 4H-P Type Off Axis 4.0°toward Zero Grade For Temperature Sensor

Name: Silicon Carbide Wafer Sic Substrate 4H-P Type Off Axis 4.0°toward Zero Grade For Temperature Sensor
Brand: SHANGHAI FAMOUS TRADE CO.,LTD
SKU: SiC 4H-P
Price: negotiable USD
Availability: InStock

Product Details

Place of Origin: CHINA

Brand Name: ZMSH

Certification: rohs

Model Number: SiC 4H-P

Payment & Shipping Terms

Price: by case

Payment Terms: T/T

Supply Ability: 1000pc/month

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Product Details

Product Description

Highlight: 
                                                                                                                                                                                                                                                                                                                4H-P Type Sic Substrate, Temperature Sensor Sic Substrate, Sic Substrate
                              

Polytype:	4H-P	Density:	3.23 G/cm3
Resistivity:	≤0.1 Ω.cm	Mohs Hardness:	≈9.2
Surface Orientation:	Off Axis: 2.0°-4.0°toward [1120] ± 0.5°	Roughness:	Polish Ra≤1 Nm
Packaging:	Multi-wafer Cassette Or Single Wafer Container	Application:	Electric Cars, Smart Grids

Polytype:	4H-P
Density:	3.23 G/cm3
Resistivity:	≤0.1 Ω.cm
Mohs Hardness:	≈9.2
Surface Orientation:	Off Axis: 2.0°-4.0°toward [1120] ± 0.5°
Roughness:	Polish Ra≤1 Nm
Packaging:	Multi-wafer Cassette Or Single Wafer Container
Application:	Electric Cars, Smart Grids

Silicon Carbide Wafer Sic Substrate 4H-P Type Off Axis 4.0°toward Zero Grade For Temperature Sensor

Product Description:

Silicon Carbide Wafer Sic Substrate 4H-P Type Off axis: 4.0°toward Zero Grade For temperature sensor

4H-P silicon carbide (SiC) substrate is a high performance semiconductor material with a unique hexagonal lattice structure. Its "4H" indicates the type of crystal structure of the material, while "P-type" refers to the P-type conductivity obtained by doping elements such as aluminum. The 4.0° off-axis design further optimizes its electrical and thermal performance, giving it significant advantages in high temperature, high frequency and high power electronics.

Features:

Wide band gap: 4H-P type silicon carbide has a wide band gap of about 3.26 eV, making it able to withstand higher temperatures and voltages and suitable for high temperature and high-frequency applications.

High thermal conductivity: Its thermal conductivity is about 4.9W /m·K, much higher than silicon materials, can effectively guide and dissipate heat, suitable for high power density applications.

Low resistivity: P-type doped silicon carbide has a low resistivity, which is conducive to the construction of PN junction and improve the performance of the device.

High hardness and toughness: Very high mechanical strength and toughness for applications under harsh conditions.

High breakdown voltage: able to withstand higher voltages, helping to reduce device size and improve energy efficiency.

Low switching loss: Good switching characteristics in high frequency operation to improve overall efficiency.

Corrosion resistance: It has good corrosion resistance to a variety of chemicals, which enhances the stability and reliability of the device.

Technical Parameter:

6 inch diameter Silicon Carbide (SiC) Substrate Specification

等级Grade			精选级(Z 级) Zero MPD Production Grade (Z Grade)	工业级(P 级) Standard Production Grade (P Grade)	测试级(D 级) Dummy Grade (D Grade)
直径 Diameter			145.5 mm~150.0 mm
厚度 Thickness			350 μm ± 25 μm
晶片方向 Wafer Orientation			- Off axis: 2.0°-4.0°toward [1120] ± 0.5° for 4H/6H-P, On axis:〈111〉± 0.5° for 3C-N
微管密度 ※ Micropipe Density			0 cm-2
电阻率 ※ Resistivity	p-type 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-type 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
主定位边方向 Primary Flat Orientation		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
主定位边长度 Primary Flat Length			32.5 mm ± 2.0 mm
次定位边长度 Secondary Flat Length			18.0 mm ± 2.0 mm
次定位边方向 Secondary Flat Orientation			Silicon face up: 90° CW. from Prime flat ± 5.0°
边缘去除 Edge Exclusion			3 mm		6 mm
局部厚度变化/总厚度变化/弯曲度/翘曲度 LTV/TTV/Bow /Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
表面粗糙度 ※ Roughness			Polish Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
边缘裂纹(强光灯观测) Edge Cracks By High Intensity Light			None		Cumulative length ≤ 10 mm, single length≤2 mm
六方空洞(强光灯测) ※ Hex Plates By High Intensity Light			Cumulative area ≤0.05%		Cumulative area ≤0.1%
多型(强光灯观测) ※ Polytype Areas By High Intensity Light			None		Cumulative area≤3%
目测包裹物(日光灯观测) Visual Carbon Inclusions			Cumulative area ≤0.05%		Cumulative area ≤3%
硅面划痕(强光灯观测) # Silicon Surface Scratches By High Intensity Light			None		Cumulative length≤1×wafer diameter
崩边(强光灯观测) Edge Chips High By Intensity Light			None permitted ≥0.2mm width and depth		5 allowed, ≤1 mm each
硅面污染物(强光灯观测) Silicon Surface Contamination By High Intensity			None
包装 Packaging			Multi-wafer Cassette or Single Wafer Container

Notes:

※ Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.

Applications:

Electric vehicles: In the drive modules and charging stations of electric vehicles, 4H-P silicon carbide substrates can be used to manufacture power devices such as highly efficient IGBTs (insulated gate bipolar transistors) to optimize power conversion efficiency and extend battery range.

Inverter: It is used to manufacture high-performance inverters to convert direct current into alternating current, which is widely used in solar power generation, wind power generation and other fields to improve energy conversion efficiency.

High Power amplifier: In communications and radar systems, type 4H-P SIC substrates can be used to manufacture high-power amplifiers that provide reliable high-frequency performance and enhance signal transmission.

LED Technology: In the field of semiconductor lighting, it can be used to manufacture high-efficiency and high-reliability LED chips, improve the luminous efficiency, and is widely used in liquid crystal display backlight, landscape lighting, automotive lights and other fields.

Smart Grid: In high-voltage direct current (HVDC) transmission and grid management, 4H-P silicon carbide substrates can be used to manufacture efficient power devices, improve energy efficiency and stability, and contribute to a more intelligent and reliable grid system.

Sensor: In the field of sensors, it can be used to manufacture high-sensitivity and high-stability sensors, such as pressure sensors, temperature sensors, etc., which are widely used in automotive electronics, medical equipment, environmental monitoring and other fields.

Industrial Equipment: Equipment and instruments adapted to high temperature conditions, such as high temperature furnace, heat treatment equipment, etc., improve the stability and service life of the equipment.

Sample display:

FAQ:

1. Q: What is the effect of 4.0° off-axis on the performance of silicon carbide substrate?

A: Off-axis cutting helps to improve the electrical and mechanical properties of the SIC substrate, such as increasing carrier mobility and optimizing surface topography, thereby improving the performance and reliability of the device.

2. Q: What is the difference between the silicon carbide substrate 4H-P off-axis to 4.0° and the standard axial substrate?

A: A 4.0° off-axis substrate may have better electrical and mechanical properties, such as higher carrier mobility and better surface topography, but the specific differences need to be determined according to the application scenario and device design.

Tag: #Sic wafer, #silicon carbide substrate, #4H-P type, #Off axis: 2.0°-4.0°toward, #Sic 4H-P type

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Silicon Carbide Wafer Sic Substrate 4H-P Type Off Axis 4.0°toward Zero Grade For Temperature Sensor

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Product Description:

Silicon Carbide Wafer Sic Substrate 4H-P Type Off axis: 4.0°toward Zero Grade For temperature sensor

Features:

Technical Parameter:

Applications:

Sample display:

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