Product Details
Place of Origin: China
Brand Name: ZMSH
Model Number: 4H-N
Payment & Shipping Terms
Price: by case
Packaging Details: Packaged in a class 100 clean room environment, in cassettes of single wafer containers
Delivery Time: 10-30days
Payment Terms: T/T, Western Union
Supply Ability: 1000pcs/months
Material: |
Sic Crystal |
Industry: |
Semiconductor Wafer Optical Lens |
Application: |
Semiconductor, Led, Device, Power Electronics,5G |
Color: |
Green |
Type: |
4H-N |
Size: |
2-12INCH |
Thickness: |
350um Or 500um |
Tolerance: |
±25um |
Grade: |
Zero/ Production/Research/Dummy |
Ttv: |
<15um |
BOW: |
<20UM |
Warp: |
《30um |
Customzied Service: |
Avaiable |
Material: |
Silicon Carbide (SiC) |
Raw Material: |
China |
Material: |
Sic Crystal |
Industry: |
Semiconductor Wafer Optical Lens |
Application: |
Semiconductor, Led, Device, Power Electronics,5G |
Color: |
Green |
Type: |
4H-N |
Size: |
2-12INCH |
Thickness: |
350um Or 500um |
Tolerance: |
±25um |
Grade: |
Zero/ Production/Research/Dummy |
Ttv: |
<15um |
BOW: |
<20UM |
Warp: |
《30um |
Customzied Service: |
Avaiable |
Material: |
Silicon Carbide (SiC) |
Raw Material: |
China |
2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials
About SiC wafer
Silicon carbide wafer is a kind of wide band gap semiconductor material. The main application areas of silicon carbide wafers are LED solid lighting and high frequency devices. The material has several times higher than traditional silicon band gap, drift speed, breakdown voltage, thermal conductivity, high temperature resistance and other excellent characteristics, in high temperature, high pressure, high frequency, high power, photoelectric, radiation resistance, microwave and other electronic applications and aerospace, military, nuclear energy and other extreme environment applications have irreplaceable advantages.
Properties of SiC wafer
-Breakdown electric field: The breakdown electric field of silicon carbide is about ten times that of silicon, so that silicon carbide devices can work at higher voltages without breakdown due to excessive electric field.
-Thermal conductivity: The thermal conductivity of silicon carbide is three times that of silicon, so that silicon carbide devices can still maintain good heat dissipation performance in high temperature environments.
-Saturated electron migration speed: silicon carbide materials have a higher saturated electron migration speed, making the performance of silicon carbide devices at high frequencies better.
-Working temperature: The working temperature of silicon carbide power devices can reach more than 600 ° C, which is 4 times that of the same silicon devices, and can withstand more extreme working environments.
Other production of our company
Growth Techniques of SiC wafer
At present, the industrial production of silicon carbide substrate is mainly based on PVT method. This method needs to sublimate the powder with high temperature and vacuum, and then let the components grow on the seed surface through thermal field control, so as to obtain the silicon carbide crystals.
Application of SiC wafer
-Power electronics:
High-frequency switches: in inverters and converters, used in electric vehicles and renewable energy systems.
Power amplifiers: In wireless communications and RF applications, SiC devices are capable of handling high power and high frequency signals.
-Electric drive systems: SiC chips are used in electric vehicle motor control and charging systems to improve energy efficiency and endurance.
-Solar inverter: In solar power generation systems, SiC devices can improve the efficiency of the inverter and reduce energy loss.
-High temperature and high pressure applications: Suitable for devices that need to operate in extreme conditions, such as sensors and electronics in the aerospace, oil and gas industries.
-LED lighting: SiC can be used to manufacture high-brightness leds that provide higher light efficiency and longer service life.
-Power Management: For efficient power conversion and power management systems to improve overall energy efficiency.
-Industrial equipment: In industrial equipment with high power and high temperature environments, SiC devices can improve reliability and performance.
FAQ:
Q: Do you support customization?
A: Yes, we do. We can customize SiC wafer according to your requirements including material, specifications and size.
