Product Details
Place of Origin: CHINA
Brand Name: ZMSH
Certification: rohs
Model Number: SiC 4H-P
Payment & Shipping Terms
Price: by case
Payment Terms: T/T
Supply Ability: 1000pc/month
Polytype: |
4H-P |
Density: |
3.23 G/cm3 |
Resistivity: |
≤0.1 Ω.cm |
Mohs Hardness: |
≈9.2 |
Surface Orientation: |
Off Axis: 2.0°-4.0°toward [1120] ± 0.5° |
Roughness: |
Polish Ra≤1 Nm |
Packaging: |
Multi-wafer Cassette Or Single Wafer Container |
Application: |
LED Chip, Satellite Communication |
Polytype: |
4H-P |
Density: |
3.23 G/cm3 |
Resistivity: |
≤0.1 Ω.cm |
Mohs Hardness: |
≈9.2 |
Surface Orientation: |
Off Axis: 2.0°-4.0°toward [1120] ± 0.5° |
Roughness: |
Polish Ra≤1 Nm |
Packaging: |
Multi-wafer Cassette Or Single Wafer Container |
Application: |
LED Chip, Satellite Communication |
Silicon carbide substrate 4H-P type refers to P-type (Positive-type) silicon carbide material with 4H crystal structure. Among them, "4H" describes a polycrystalline form of silicon carbide, which has a hexagonal lattice structure and is a more common one among various crystal forms of silicon carbide, and is widely used in semiconductor device manufacturing because of its excellent physical and chemical properties. The off-axis is 2.0°, which refers to the deviation Angle of the cutting direction of the substrate relative to the crystal spindle, which has a certain influence on the electrical and mechanical properties of the material.
2 inch diameter Silicon Carbide (SiC) Substrate Specification
|
等级 Grade |
工业级 Production Grade (P Grade) |
研究级 Research Grade (R Grade) |
试片级 Dummy Grade (D Grade) |
||
| 直径 Diameter | 50.8mm±0.38mm | ||||
| 厚度 Thickness | 350 μm±25 μm | ||||
| 晶片方向 Wafer Orientation | Off axis: 2.0°-4.0°toward [1120] ± 0.5° for 4H/6H-P, On axis:〈111〉± 0.5° for 3C-N | ||||
| 微管密度 Micropipe Density | 0 cm-2 | ||||
| 电阻率 ※Resistivity | 4H/6H-P | ≤0.1 Ω.cm | |||
| 3C-N | ≤0.8 mΩ•cm | ||||
| 主定位边方向 Primary Flat Orientation | 4H/6H-P | {10-10} ±5.0° | |||
| 3C-N | {1-10} ±5.0° | ||||
| 主定位边长度 Primary Flat Length | 15.9 mm ±1.7 mm | ||||
| 次定位边长度 Secondary Flat Length | 8.0 mm ±1.7 mm | ||||
| 次定位边方向 Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | ||||
| 边缘去除 Edge Exclusion | 3 mm | 3 mm | |||
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ||||
| 表面粗糙度※ Roughness | Polish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | |||||
| 边缘裂纹(强光灯观测) Edge Cracks By High Intensity Light | None | 1 allowed, ≤1 mm | |||
| 六方空洞(强光灯观测) ※ Hex Plates By High Intensity Light | Cumulative area≤1 % | Cumulative area≤3 % | |||
| 多型(强光灯观测) ※ Polytype Areas By High Intensity Light | None | Cumulative area≤2 % | Cumulative area≤5% | ||
|
Si 面划痕(强光灯观测)# Silicon Surface Scratches By High Intensity Light |
3 scratches to 1×wafer diameter cumulative length |
5 scratches to 1×wafer diameter cumulative length |
8 scratches to 1×wafer diameter cumulative length | ||
| 崩边(强光灯观测) Edge Chips High By Intensity Light light | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | ||
|
硅面污染物(强光灯观测) Silicon Surface Contamination By High Intensity |
None | ||||
| 包装 Packaging | Multi-wafer Cassette or Single Wafer Container | ||||
Notes:
※Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.
1. Q:What is the effect of 2.0° off-axis on the performance of silicon carbide substrate?
A:Off-axis cutting can improve some electrical and mechanical properties of SIC substrate, such as increasing carrier mobility and optimizing surface topography, which is conducive to the manufacture and performance improvement of subsequent devices.
2. Q:How to choose the right silicon carbide substrate 4H-P off-axis to 2.0°?
A:ZMSH can select products that meet customer requirements based on the specific application scenario, taking into account factors such as substrate purity, defect density, crystal integrity and doping concentration.
Tag: #Sic wafer, #silicon carbide substrate, #4H-P type, #Off axis: 2.0°-4.0°toward, #Sic 4H-P type
