12inch Sic Wafer Silicon Carbide 4H-N Type Production Grade Dummy Grade Large Size

12inch Sic wafer silicon carbide 4H-N type production grade dummy grade large size

A 12-inch silicon carbide (SiC) substrate is a large-size substrate material used to manufacture high-performance semiconductor devices. Silicon carbide is a wide bandgap semiconductor material with excellent physical, chemical and electrical properties for high temperature, high frequency and high power applications. The 12-inch (300 mm) substrate is currently at the forefront of silicon carbide technology and represents the semiconductor industry's demand trend for large size, high efficiency and low cost manufacturing.

The manufacturing process of the 12-inch silicon carbide substrate includes steps such as crystal growth, cutting, grinding and polishing. Common crystal growth methods include physical vapor transfer (PVT) and high temperature chemical vapor deposition (HTCVD) to ensure high purity and crystal quality of the material. Through precision machining, 12-inch silicon carbide substrates can meet the stringent requirements of advanced semiconductor devices for surface flatness, defect density and electrical properties.

Due to its excellent performance, 12-inch silicon carbide substrate has a wide range of application prospects in the fields of power electronics, radio frequency communications, new energy vehicles and industrial equipment, and has become one of the key materials to promote the development of next-generation semiconductor technology.

12inch Sic wafer characteristic

• Wide band gap characteristics:Silicon carbide has a band gap of 3.26 eV (4H-SiC), which is much higher than silicon (1.12 eV), enabling it to operate stably in high temperature, high frequency and high voltage environments.

• High thermal conductivity:The thermal conductivity of silicon carbide is as high as 4.9W /cm·K, which is more than 3 times that of silicon, and it can effectively dissipate heat and is suitable for the manufacture of high power density devices.

• ​High breakdown electric field strength:The breakdown electric field strength of silicon carbide is 2.8 MV/cm, which is 10 times that of silicon, making it able to withstand higher voltages and suitable for high-voltage devices.

• ​High electron saturation drift velocity:Silicon carbide has electron saturation drift speeds of up to 2.0×10^7 cm/s, making it excellent in high-frequency applications and suitable for RF and microwave devices.

• Excellent chemical stability:Silicon carbide has strong corrosion resistance to most acids, bases and solvents, and can maintain stable performance in harsh environments.

• Large size and high uniformity:The 12-inch silicon carbide substrate has a larger surface area and higher crystal quality uniformity, which can improve the efficiency and yield of device manufacturing and reduce production costs.

• ​Low defect density:Through advanced crystal growth and processing technologies, the defect density of 12-inch silicon carbide substrates is significantly reduced to meet the manufacturing needs of high-performance devices.

12inch Sic wafer Parameter

12inch Sic wafer applications​

12inch Sic wafer display

12 "silicon carbide substrate with its wide band gap characteristics, high thermal conductivity, high breakdown electric field strength and high electron saturation drift speed and other excellent properties.