Product Details
Place of Origin: CHINA
Brand Name: ZMSH
Model Number: SiC substrate
Payment & Shipping Terms
Packaging Details: customzied plastic box
Delivery Time: 2-4 weeks
Payment Terms: T/T
Surface: |
Si-face CMP; C-face Mp; |
Breakdown Voltage: |
5.5 MV/cm |
Density: |
3.21 G/cm3 |
Thermal Conductivity: |
4.9 W/mK |
Dielectric Constant: |
9.7 |
Resistivity: |
0.015~0.028ohm.cm; Or >1E7ohm.cm; |
Surface Hardness: |
HV0.3>2500 |
Dopant: |
N/A |
Surface: |
Si-face CMP; C-face Mp; |
Breakdown Voltage: |
5.5 MV/cm |
Density: |
3.21 G/cm3 |
Thermal Conductivity: |
4.9 W/mK |
Dielectric Constant: |
9.7 |
Resistivity: |
0.015~0.028ohm.cm; Or >1E7ohm.cm; |
Surface Hardness: |
HV0.3>2500 |
Dopant: |
N/A |
Coherent's comprehensive offerings in SiC epitaxial wafers not only expedite product development but also substantially lower production costs and enhance the overall performance of devices. With diameters up to 200 mm, these wafers are engineered to support a diverse range of needs from R&D through to full-scale volume production. The flexibility in customization includes options such as thick epilayers, with or without buffer layers, and tailored doping levels to suit specific device requirements. Additionally, Coherent's technology allows for the integration of complex structures such as multilayer configurations, p-n junctions, and embedded or buried structures alongside contact layers. This level of customization ensures that clients can fine-tune the substrate properties to match their exact requirements, thereby optimizing device functionality and efficiency. Furthermore, Coherent's commitment to supporting clients from the research phase through to mass production demonstrates a robust partnership approach, facilitating smoother transitions from prototype to market-ready products. This holistic solution empowers semiconductor manufacturers to stay ahead in competitive markets by leveraging high-performance materials engineered for future technologies.
Pecification | Value |
Product Name | SiC Substrate |
Breakdown Voltage | 5.5 MV/cm |
Tensile Strength | >400 MPa |
Thermal Expansion Coefficient | 4.5 X 10-6/K |
Dielectric Constant | 9.7 |
Surface | Si-face CMP; C-face Mp |
Applications:
Silicon Carbide (SiC) substrates, particularly those in larger diameters like 6 inch and 8 inch, are increasingly pivotal in the semiconductor industry, especially for applications requiring epitaxial layers. These substrates are known for their outstanding material properties which include high thermal conductivity, excellent electrical insulation, and superior mechanical strength. The larger diameter SiC substrates facilitate greater yields in device fabrication, making them highly efficient for large-scale production.
Epitaxial preparation on SiC involves depositing a crystalline layer of silicon carbide onto the SiC substrate to form a structurally and chemically consistent single crystal. This process is critical for applications in power electronics and optoelectronics, where device performance is significantly enhanced by the quality of the epitaxial layer. The use of laser cutting technology in preparing these substrates ensures precise dimensions and minimal material wastage, enhancing the overall efficiency of the manufacturing process.
Each 6 inch and 8 inch Silicon Carbide (SiC) substrate is individually packaged with utmost care to ensure maximum protection. The process begins with a thorough cleaning and inspection to guarantee only defect-free substrates are packaged. Each substrate is then wrapped in anti-static material to protect against scratches and static damage. It is placed into a custom-fit, rigid container designed to minimize movement and prevent any physical damage. This container is then cushioned with foam or bubble wrap within a secondary box, which is securely sealed and clearly labeled with essential handling and content information. For substrates sensitive to environmental conditions, measures like silica gel packets are added to control humidity, ensuring that the SiC substrates arrive in optimal condition, ready for high-precision applications in semiconductor manufacturing.
The SiC substrate product will be shipped via a reputable courier service. The shipping method will depend on the customer's location and preferences. Customers will be provided with a tracking number to monitor the progress of their shipment. Delivery times will vary depending on the destination, but customers can expect their order to arrive within 7-10 business days.