Product Details
Place of Origin: CHINA
Brand Name: ZMSH
Certification: rohs
Model Number: SiC Substrate
Payment & Shipping Terms
Packaging Details: customzied plastic box
Delivery Time: 4-8 weeks
Payment Terms: T/T
Supply Ability: 1000pc/month
Size: |
Customized |
Breakdown Voltage: |
5.5 MV/cm |
Substrate Type: |
SiC Substrate |
Material: |
Silicon Carbide |
Surface Hardness: |
HV0.3>2500 |
Surface Roughness: |
Ra<0.5nm |
Dopant: |
N/A |
Dielectric Constant: |
9.7 |
Size: |
Customized |
Breakdown Voltage: |
5.5 MV/cm |
Substrate Type: |
SiC Substrate |
Material: |
Silicon Carbide |
Surface Hardness: |
HV0.3>2500 |
Surface Roughness: |
Ra<0.5nm |
Dopant: |
N/A |
Dielectric Constant: |
9.7 |
The SiC Substrate is available in various sizes, including 2inch, 3inch, 4inch, 6inch, and 8inch. This allows customers to choose the most suitable size for their specific application needs.
Our high-quality SiC substrates offer superior properties and are available in 3-inch and 4-inch diameters with a thickness of 330 µm. These substrates are crafted from 4H-N type Silicon Carbide (SiC), recognized for its excellent thermal conductivity and electrical insulation properties. Designed to meet the rigorous demands of production-grade applications, our SiC substrates are ideal for the development of high-performance power devices and LEDs. With their ability to withstand high temperatures and harsh environments, they ensure reliability and efficiency in your semiconductor manufacturing processes. Whether you are in the field of electronics, optoelectronics, or power electronics, our SiC substrates provide the foundation needed to drive technological advancements and enhance device performance.
The SiC Substrate is available in custom size plates, including 1x1cm, 0.5x0.5mm, 5x5mm, and 10x10mm. This gives customers the flexibility to choose the specific size that meets their design and manufacturing requirements.
In summary, the SiC Substrate is a high-quality material that offers exceptional physical and chemical properties, making it an ideal choice for various electronic devices. Its availability in different sizes, including custom size plates such as 1x1cm and 0.5x0.5mm, makes it a versatile and flexible material for design and manufacturing purposes.
Product Name: SiC Substrate
| Specification | 2 inch | 3 inch | 4 inch |
| Thickness | 330 µm | 330 µm | 330 µm |
| Crystal Type | 4H-N | 4H-N | 4H-N |
| Grade | Production Grade | Production Grade | Production Grade |
| Application Areas | Power electronics, LEDs, RF devices | Power electronics, LEDs, RF devices | Power electronics, LEDs, RF devices |
The SiC substrate product is available in customized sizes, allowing it to be used in various applications. It can be used in the electronics industry, including in the production of power devices, high-frequency devices, and microwave devices. The customized size sic chips are perfect for creating highly efficient and reliable electronic devices. The SiC substrate product has a thermal expansion coefficient of 4.5 X 10-6/K, which makes it an ideal material for high-temperature applications.
The 2 inch, 3 inch, and 4 inch SiC substrates with a thickness of 330um and 4H-N type are extensively utilized in the semiconductor industry for the production of blue and green LEDs and high-power transistors. These substrates are favored for their high thermal conductivity, which makes them ideal for high-temperature applications such as in the electronics and optics industries, including the manufacturing of laser cutting machines. The high thermal conductivity is particularly beneficial for developing advanced power electronic devices, such as inverters and converters, enhancing their efficiency and reliability in operation.These SiC substrates are also suitable for the production of optoelectronic devices, high-power devices, and high-frequency power devices. Their versatility and ability to perform in extreme conditions make them a valuable component in various applications spanning automotive, aerospace, energy, and more.
ZMSH SIC010 SiC substrate is a high-quality substrate that can be customized to your specifications. Our substrate is made in CHINA and is ROHS certified. The minimum order quantity is 10pc and the price is by case. Packaging details include customized plastic box for your convenience. Delivery time is within 30 days and payment terms are T/T. Our supply ability is 1000pc/month.
This substrate has a thermal conductivity of 4.9 W/mK and a resistivity of 0.015~0.028ohm.cm; Or >1E7ohm.cm;. The dopant is N/A and the substrate type is substrate. The size can be customized to your needs.
Our product customization services for ZMSH SIC010 SiC substrate include 4h-semi HPSI sic wafer, sic laser cutting, and sic laser cutting. Contact us to learn more about our customization options.
For packaging and shipping of the SiC substrates, each unit is meticulously packaged individually to ensure maximum protection during transit. Typically, the substrate is first wrapped in a protective layer that guards against scratches and other physical damages. This is often followed by placing the wrapped substrate into a custom-fitted foam insert that provides additional shock absorption. The foam is then housed within a sturdy, durable cardboard box specifically designed to withstand the rigors of shipping. Each box is clearly labeled with the product specifications and handling instructions to ensure that the substrates arrive at their destination in optimal condition. This methodical approach to packaging not only secures the product but also simplifies the unboxing process for the recipient, ensuring that the high-quality substrates are ready for immediate use upon delivery.
