Product Details
Place of Origin: Shanghai China
Brand Name: ZMSH
Certification: ROHS
Model Number: Silicon Carbide Wafer
Payment & Shipping Terms
Delivery Time: 4-6weeks
Payment Terms: T/T
Material: |
SiC Single Crystal 4h-N |
Grade: |
P/D/R Grade |
Color: |
Green |
Diameter: |
12 Inch |
Material: |
SiC Single Crystal 4h-N |
Grade: |
P/D/R Grade |
Color: |
Green |
Diameter: |
12 Inch |
12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade Multiple Applications
Product introduction
SiC, commonly referred to as silicon carbide, is a compound formed by combining silicon and carbon. Silicon carbide seed crystal is an important form, which is widely used in semiconductor materials, ceramics, abrasives and other fields. Silicon carbide is second only to diamond in hardness, making it an excellent abrasive and cutting tool. 4H-SiC, has a hexagonal crystal structure with four layers of repeating sequences. Compared with other polycrystalline SiC such as 6H-SiC, 4H-SiC has higher thermal conductivity, larger band gap and higher electron mobility. Because of these properties, 4H-SiC is more suitable for high-power and high-frequency electronic devices.
Growth Techniques
At present, the industrial production of silicon carbide substrate is mainly based on PVT method. This method needs to sublimate the powder with high temperature and vacuum, and then let the components grow on the seed surface through thermal field control, so as to obtain the silicon carbide crystals.
Product Parameters
| Diameter | 300.0 mm+0mm/-0.5mm |
| Surface Orientation | 4°toward<11-20>±0.5° |
| Primary Flat Length | Notch |
| Secondary Flat Length | None |
| Notch Orientation | <1-100>±1° |
| Notch Angle | 90°+5/-1° |
| Notch Depth | 1mm+0.25mm/-0mm |
| Orthogonal Misorientation | ±5.0° |
| Surface Finish | C-Face:Optical Polish,Si-Face:CMP |
| Wafer Edge | Beveling |
| Surface Roughness (10μm×10μm) |
Si-Face:Ra≤0.2 nm C-Face:Ra≤0.5 nm |
| Thickness | 500.0μm±25.0μm |
| LTV(10mmx10mm) | ≤3μm |
| TTV | ≤10μm |
| BOW | ≤25μm |
| Warp | ≤40μm |
| Surface Parameters | |
| Chips/Indents | None permitted≥0.5mm Width and Depth |
| Scratches² (Si face CS8520) |
≤5 and Cumulative Length≤1 Wafer Diameter |
| TUA²(2mm*2mm) | ≥95% |
| Cracks | None Permitted |
| Stain | None Permitted |
| Edge Exclusion | 3mm |
Product key features
-High electrical conductivity: Nitrogen doping improves the electrical conductivity of the material and is suitable for high performance power converters.
-Excellent thermal performance: Good thermal conductivity enables the equipment to maintain stable performance in high temperature environments.
-High breakdown voltage: able to withstand higher voltages, suitable for high voltage applications.
-Environmental adaptability: Performs well in harsh environments for aerospace and military applications.
Product Applications
1. Power electronics
-High voltage inverters: for renewable energy systems, such as solar and wind power generation.
-Rectifier: Used in power conversion and power management.
2. Radio frequency device
-Wireless communication: Radio frequency amplifier for base stations and mobile devices.
-Radar systems: Used for high-frequency signal processing in aviation and military applications.
3. Automotive electronics
-Electric vehicles: used in electric drive systems and charging equipment to improve energy efficiency and performance.
-Smart cars: Applications in autonomous driving and connected vehicle technologies.
4.Photoelectric device
-LED: Used for high-brightness light-emitting diodes to improve light efficiency and durability.
-Lasers: Used in laser lighting and industrial processing.
The superior performance of 4H-N SiC wafer makes it have a wide range of application potential in the above fields, and promotes the development of high-efficiency and high-reliability devices.
Other Products We Can Provide
2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm
About us
FAQ
1. Q: What's the difference between 4H-SiC and 6H-SiC?
A: 4H-SiC is widely used in the field of microelectronics, especially in high frequency, high temperature, high power devices. 6H-SiC is more suitable for optoelectronics. The choice of the two polymorphs depends on the specific requirements and intended application of the semiconductor device.
2. Q: What are the properties of 4H SiC?
A: High electrical conductivity, excellent thermal performance, high breakdown voltage.
Tags: #12 inch SIC wafer, #Diameter 300mm, #SiC Silicon Carbide substrate, #4H-N Type, #Dummy/Prime/Research Grade, #Multiple Applications
