2Inch Sic Substrate 6H-N Type Thickness 350um 650um Sic Wafer

The 6H n-type Silicon Carbide (SiC) single-crystal substrate is an essential semiconductor material extensively used in high-power, high-frequency, and high-temperature electronic applications. Renowned for its hexagonal crystal structure, 6H-N SiC offers a wide bandgap and high thermal conductivity, making it ideal for demanding environments.

This material's high breakdown electric field and electron mobility enable the development of efficient power electronic devices, such as MOSFETs and IGBTs, that can operate at higher voltages and temperatures than those made from traditional silicon. Its excellent thermal conductivity ensures effective heat dissipation, critical for maintaining performance and reliability in high-power applications.

In radiofrequency (RF) applications, 6H-N SiC's properties support the creation of devices capable of operating at higher frequencies with improved efficiency. Its chemical stability and resistance to radiation also make it suitable for use in harsh environments, including aerospace and defense sectors.

Furthermore, 6H-N SiC substrates are integral to optoelectronic devices, such as ultraviolet photodetectors, where their wide bandgap allows for efficient UV light detection. The combination of these properties makes 6H n-type SiC a versatile and indispensable material in advancing modern electronic and optoelectronic technologies.

SiC wafer Features:

• Product Name: SiC Substrate
• Hexagonal Structure: Unique electronic properties.
• High Electron Mobility: ~600 cm²/V·s. 
• Chemical Stability: Resistant to corrosion.
• Radiation Resistance: Suitable for harsh environments.
• Low Intrinsic Carrier Concentration: Efficient at high temperatures.
• Durability: Strong mechanical properties.
• Optoelectronic Capability: Effective UV light detection.

SiC wafer Technical Parameters: 

SiC wafer Applications:

SiC (Silicon Carbide) substrates are used in various high-performance applications due to their unique properties such as high thermal conductivity, high electric field strength, and wide bandgap. Here are some applications:

• Power Electronics:

  • High-voltage MOSFETs
  • IGBTs (Insulated Gate Bipolar Transistors)
  • Schottky diodes
  • Power inverters

• High-Frequency Devices:

  • RF (Radio Frequency) amplifiers
  • Microwave transistors
  • Millimeter-wave devices

• High-Temperature Electronics:

  • Sensors and circuits for harsh environments
  • Aerospace electronics
  • Automotive electronics (e.g., engine control units)

• Optoelectronics:

  • Ultraviolet (UV) photodetectors
  • Light-emitting diodes (LEDs)
  • Laser diodes

• Renewable Energy Systems:

  • Solar inverters
  • Wind turbine converters
  • Electric vehicle powertrains

• Industrial and Defense:

  • Radar systems
  • Satellite communications
  • Nuclear reactor instrumentation

SiC wafer Customization:

We can customize the size of the SiC substrate to meet your specific requirements. We also offer a 4H-Semi HPSI SiC wafer with a size of 10x10mm or 5x5 mm.

The price is determined by the case, and the packaging details can be customized to your preference.

Delivery time is within 2-4 weeks. We accept payment through T/T.

SiC wafer Support and Services:

Our SiC Substrate product comes with comprehensive technical support and services to ensure optimal performance and customer satisfaction.

Our team of experts is available to assist with product selection, installation, and troubleshooting.

We offer training and education on the use and maintenance of our products to help our customers maximize their investment.

Additionally, we provide ongoing product updates and enhancements to ensure our customers always have access to the latest technology.

SiC wafer FAQ:

Q: Can 2-inch 6H-N SiC substrates be used for all types of semiconductor devices?

A: While 2-inch 6H-N SiC substrates are versatile, they are particularly well-suited for high-power and high-frequency devices.

     They may not be ideal for all types of semiconductor devices, especially those not requiring the unique properties of SiC.

Q: What are the typical dimensions and specificationsfor a 2-inch 6H-N SiC substrate?

A: Typical dimensions include a diameter of 2 inches (50.8 mm), thickness around 300-500 micrometers, and specific surface quality and flatness requirements.

     The exact specifications can vary depending on the manufacturer and intended application.

Q: How do you handle and store 2-inch 6H-N SiC substrates?

A: Due to their brittleness, SiC substrates should be handled with care using cleanroom gloves and proper handling tools.

     They should be stored in a controlled environment to avoid contamination and damage.