Product Details
Place of Origin: China
Brand Name: ZMSH
Model Number: SiC Substrate
Payment & Shipping Terms
Delivery Time: 2-4 weekds
Payment Terms: T/T
Material: |
SiC Single Crystal |
Type: |
4H-N Type |
Thickness: |
350um 500um |
Density: |
3.21 G/cm3 |
Surface: |
Si-face CMP; C-face Mp; |
Wafer Orientation: |
Off Axis: 4 Deg Toward <1120> +/- 0.5 Deg |
Material: |
SiC Single Crystal |
Type: |
4H-N Type |
Thickness: |
350um 500um |
Density: |
3.21 G/cm3 |
Surface: |
Si-face CMP; C-face Mp; |
Wafer Orientation: |
Off Axis: 4 Deg Toward <1120> +/- 0.5 Deg |
- use SIC Monocrystal to make
- support customized ones with design artwork
- high performance, wide bandgap, high electron mobility
- high hardness, about 9.2 Mohs
- widely used in high-tech areas, like power electronics, LEDs and sensors
Silicon carbide (SiC) wafers, composed of silicon and carbon, are a crucial semiconductor material utilized in various applications.
Known for their distinctive electrical and thermal properties, SiC wafers play an essential role in the semiconductor industry.
They are especially advantageous in high-temperature environments and offer several benefits over conventional silicon wafers.
*Product specification sheet is below.
| Property | P grade | D grade |
| Crystal Form | 4H-N | |
| Polytype | None Permitted | Area≤5% |
| (MPD)a | ≤1/cm2 | ≤5/cm2 |
| Hex Plates | None Permitted | Area≤5% |
| Hexagonal Polycrystal | None Permitted | |
| Inclusions | Area≤0.05% | N/A |
| Resistivity | 0.015Ω•cm—0.028Ω•cm | 0.014Ω•cm—0.028Ω•cm |
| (EPD)a | ≤8000/cm2 | N/A |
| (TED)a | ≤6000/cm2 | N/A |
| (BPD)a | ≤2000/cm2 | N/A |
| (TSD)a | ≤1000/cm2 | N/A |
| Stacking Fault | ≤1% Area | N/A |
| Surface Metal Contamination | (Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca, V, Mn) ≤1E11cm-2 | |
The silicon carbide (SiC) industrial chain consists of several key stages: substrate material preparation, epitaxial layer growth, device manufacturing, and downstream applications.
SiC monocrystals are typically produced using the physical vapour transmission (PVT) method.
These crystals then serve as substrates for the chemical vapour deposition (CVD) process, which creates epitaxial layers.
These layers are subsequently used to manufacture various devices.
In the SiC device industry, the majority of the value is concentrated in the upstream substrate manufacturing stage due to its technical complexity.
ZMSH company offers SiC wafers in sizes 2inch, 4inch, 6inch, 8inch and 12inch.
If you have other size requirements, we can customize them. (please tell us the specific parameters)
Due to its exceptional hardness (SiC is the second hardest material globally) and stability under high temperatures and voltage,
SiC is extensively utilized across multiple industries.
*We can customize it if you have further requirements.
We have an experienced engineering team, management expertise, precision processing equipment, and testing instruments, providing us with extremely strong capabilities in processing non-standard products.
We can research, develop, and design various new products according to customer needs.
The company will adhere to the principle of "customer-centred, quality-based" and strive to become a top-tier high-tech enterprise in the field of optoelectronic materials.
*when we manufacture the SiC
1. 2Inch Sic Substrate 6H-N Type Thickness 350um,650um Sic Wafer
2.6" High Purity Silicon 4H-Semi SIC Dummy Grade Semiconductor Wafers LED 5G D Grade
1. Q: How does 4H-N SiC compare to silicon?
A: 4H-N SiC has a wider bandgap, higher thermal conductivity, and better breakdown voltage compared to silicon.
2. Q: What is the future outlook for 4H-N SiC technology?
A: The future outlook for 4H-N SiC technology is promising, with increasing demand in power electronics, renewable energy, and advanced electronic systems.
