Product Details
Place of Origin: China
Brand Name: ZMSH
Model Number: SiC Substrate
Payment & Shipping Terms
Delivery Time: 2-4 weeks
Payment Terms: T/T
Material: |
SiC Single Crystal |
Type: |
N Type |
Grade: |
Prime / Dummy Grade |
Density: |
3.2 G/cm3 |
Size: |
5mm*5mm |
Orientation: |
<1120> |
Material: |
SiC Single Crystal |
Type: |
N Type |
Grade: |
Prime / Dummy Grade |
Density: |
3.2 G/cm3 |
Size: |
5mm*5mm |
Orientation: |
<1120> |
Semi-insulating SiC on Si Compound Wafer, SiC wafer, Silicon Carbide Wafer, Compound Wafer, SiC on Si Compound Substrate, Silicon Carbide Substrate, Prime Grade, Dummy Grade, Square SiC, 2inch, 4inch, 6inch, 8inch, 12inch 4H-N, 6H-N, 4H-SEMI
- support customized ones with design artwork
- use SiC Monocrystal to make (Silicon Carbide Single Crystal)
- high performance, high hardness 9.2, wear-resistant
- wide bandgap and high electron mobility
-Widely used in technology sectors such as power electronics, LEDs, sensors, etc.
SiC substrate refers to a wafer made of silicon carbide (SiC), which is a wide-bandgap semiconductor material that has excellent electrical and thermal properties.
4H-N SiC is a silicon carbide material that belongs to the 4H crystal structure in the silicon carbide polytype.
Its "N" represents that it is an N-type semiconductor material with electronic conductivity.
The 4H structure is a four-layer stacked hexagonal crystal arrangement.
With this unique crystal structure, its application in high-power and high-frequency electronic devices is very prominent.
4H-N SiC has a wide bandgap (about 3.26 eV) and can still operate stably at high temperatures, making it suitable for electronic devices in extreme environments.
Its wide bandgap brings good thermal stability and excellent radiation resistance, especially suitable for occasions such as aerospace and nuclear energy that require extremely high material stability.
In addition, 4H-N SiC has higher electron mobility and higher breakdown electric field strength, so it is widely used in power semiconductors, radio frequency devices, and high-efficiency energy and electronic devices such as electric vehicles.
Its excellent physical properties make it a key material for future high-efficiency electronic systems, which can significantly improve efficiency and performance.
| Grade | Production Grade | Dummy Grade | |
| Diameter | 150.0 mm +/- 0.2 mm | ||
| Thickness | 500 um +/- 25 um for 4H-SI350 um +/- 25 um for 4H-N | ||
| Wafer Orientation | On axis: <0001> +/- 0.5 deg for 4H-SIOff axis: 4.0 deg toward <11-20> +/-0.5 deg for 4H-N | ||
| Micropipe Density (MPD) | 5 cm-2 | 30 cm-2 | |
| Doping Concentration | N-type: ~ 1E18/cm3SI-type (V-doped): ~ 5E18/cm3 | ||
| Primary Flat (N-type) | {10-10} +/- 5.0 deg | ||
| Primary Flat Length (N-type) | 47.5 mm +/- 2.0 mm | ||
| Notch (Semi-Insulating type) | Notch | ||
| Edge exclusion | 3 mm | ||
| TTV /Bow /Warp | 15um /40um /60um | ||
| Surface Roughness | Polish Ra 1 nm | ||
| CMP Ra 0.5 nm on the Si face | |||
*This is the 2inch one.
1.4inch 3C N-type SiC Substrate Silicon Carbide Substrate Thick 350um Prime grade Dummy grade
FAQ
1.Q: Can I use 4H-N SiC personally?
A: Yes, you can use 4H-N SiC personally, but ensure you have the necessary knowledge, equipment, and budget to handle and apply it safely.
2.Q: What is the future prospect of 4H-N SiC
A: The future prospect of 4H-N SiC is promising, with increasing demand in high-power electronics, electric vehicles, and next-generation semiconductor technologies due to its superior electrical and thermal properties.
