Product Details
Place of Origin: China
Brand Name: ZMSH
Model Number: SiC Ingot
Payment & Shipping Terms
Delivery Time: 2-4 weeks
Payment Terms: T/T
Material: |
SiC Single Crystal |
Type: |
4H-N |
Grade: |
Prime/ Dummy |
Dia: |
150mm |
Thickness: |
17mm |
Customized: |
Supported |
Material: |
SiC Single Crystal |
Type: |
4H-N |
Grade: |
Prime/ Dummy |
Dia: |
150mm |
Thickness: |
17mm |
Customized: |
Supported |
- support customized ones with design artwork
- a hexagonal crystal (4H SiC), made by SiC monocrystal
- High hardness, Mohs hardness reaches 9.2, second only to diamond.
- excellent thermal conductivity, suitable for high-temperature environments.
- wide bandgap characteristics, suitable for high-frequency, high-power electronic devices.
SiC ingot (Silicon Carbide Ingot) is a high-purity crystal made of silicon carbide material, which is widely used in high-power electronic devices and semiconductor industry.
SiC ingots are usually grown by methods such as physical vapor transport (PVT) or chemical vapor deposition (CVD), and have extremely high thermal conductivity, wide bandgap and excellent chemical stability.
These characteristics make SiC ingots particularly suitable for the manufacture of electronic devices that require high-speed switching, high temperature and high voltage operation.
The growth process of SiC ingots is complex and strictly controlled to ensure the high quality and low defect rate of the crystal.
Due to its excellent thermal and electrical properties, SiC ingots have wide application potential in energy conservation, electric vehicles, renewable energy and aerospace.
In addition, the hardness of SiC ingots is extremely high, close to that of diamonds, which requires specialized equipment and technology during cutting and processing.
Overall, SiC ingots represent an important direction for the development of high-performance electronic device materials in the future.
The ingot is first grown through a high-temperature melting and cooling process and then processed into a substrate through processes such as cutting and polishing.
Substrates are the basic materials in the manufacture of semiconductor devices and are used to make various electronic components.
Therefore, silicon carbide ingots are the key raw materials for producing silicon carbide substrate.
| Item | Specification |
| Diameter | 150 mm |
| SiC Polytype | 4H-N |
| SiC Resistivity | ≥1E8 Ω·cm |
| Transfer SiC layer Thickness | ≥0.1 μm |
| Void | ≤5 ea/wafer (2 mm > D > 0.5 mm) |
| Front roughness | Ra ≤ 0.2 nm (5 μm × 5 μm) |
| Orientation | <111>/<100>/<110> |
| Type | P/N |
| Flat/Notch | Flat/Notch |
| Edge Chip, Scratch, Crack (visual inspection) | None |
| TTV | ≤5 μm |
| Thickness | 15mm |
Other pictures of SiC Ingot
*Please feel free to reach out to us if you have customized demands.
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FAQ
1. Q: Compared with substrate, what about the application of ingot?
A: Compared with substrate, silicon carbide ingots have higher purity and mechanical strength and are suitable for use in extreme environments.
Ingots offer superior mechanical strength and purity, making them ideal for applications in high-power and high-frequency devices
2. Q: What is the market outlook for silicon carbide ingots?
A: As the electric vehicle and renewable energy markets grow, the demand for silicon carbide ingots continues to rise.
