6H-P Silicon Carbide SiC Substrate 6 Inch SIC Wafer 4H-P For Optoelectronic Devices

SiC Substrate, Silicon Carbide Substrate, SiC raw Substrate, Silicon Carbide raw Substrate, Prime Grade, Dummy Grade, 4H-P SiC Substrate, 6H-P SiC Substrate, 3C-N SiC 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type

About P-Type SiC Substrate

- support customized ones with design artwork

- a hexagonal crystal (4H SiC), made by SiC monocrystal

- high hardness, Mohs hardness reaches 9.2, second only to diamond.

- excellent thermal conductivity, suitable for high-temperature environments.

- wide bandgap characteristics, suitable for high-frequency, high-power electronic devices.

Description of P-Type SiC Substrate

6H-P SiC (hexagonal polycrystalline silicon carbide) is an important semiconductor material, which is widely used in high-temperature, high-frequency and high-power electronic devices due to its excellent thermal stability and electrical properties. Its unique hexagonal crystal structure enables 6H-P SiC to maintain good conductivity and mechanical strength under extreme conditions. It has a band gap of about 3.0 electron volts, a high breakdown voltage and excellent thermal conductivity, so it shows great application potential in power electronic devices, solar cells and LEDs.

Compared with N-type SiC, 6H-P SiC has obvious differences in doping type and conductivity mechanism. N-type SiC increases its conductivity by adding electron donors (such as nitrogen or phosphorus) to increase the carrier concentration. In contrast, the carrier type and concentration of 6H-P SiC depend on the selection and distribution of its doping elements. N-type SiC usually has higher electron mobility and lower resistivity, which makes it perform well in high-frequency applications, while 6H-P SiC can maintain stability under high temperature and high power environments due to its structural characteristics, making it suitable for applications such as power electronics and high-temperature sensors.

The production process of 6H-P SiC is relatively mature, and it is mainly prepared by chemical vapor deposition (CVD) and melt growth. Due to its excellent mechanical strength and corrosion resistance, 6H-P SiC is considered to be an ideal choice to replace traditional silicon materials, especially for applications in harsh environments.

With the increasing demand for high-efficiency devices, the research and development of 6H-P SiC is constantly advancing, and it is expected to play a greater role in new energy vehicles, smart grids, and radio frequency devices in the future. Both have their own advantages, and the choice needs to be comprehensively considered according to the specific application requirements.

Details of P-Type SiC Substrate

Samples of P-Type SiC Substrate