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Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

Name: Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices
Brand: SHANGHAI FAMOUS TRADE CO.,LTD
SKU: 6H-P SiC
Price: negotiable USD
Availability: InStock

Product Details

Place of Origin: CHINA

Brand Name: ZMSH

Certification: rohs

Model Number: 6H-P SiC

Payment & Shipping Terms

Minimum Order Quantity: 10pc

Price: by case

Packaging Details: customzied plastic box

Delivery Time: in 30days

Payment Terms: T/T

Supply Ability: 1000pc/month

Get Best Price

Product Details

Product Description

Highlight: 
                                                                                                                                                                                                                                                                                                                High-power Devices SIC Wafer, 350μm SIC Wafer, 10*10 mm SIC Wafer
                              

Surface Hardness:	HV0.3>2500	Density:	3.21 G/cm3
Thermal Expansion Coefficient:	4.5 X 10-6/K	Dielectric Constant:	9.7
Tensile Strength:	>400MPa	Material:	SiC Monocrystal
Size:	10*10 Mm	Breakdown Voltage:	5.5 MV/cm

Surface Hardness:	HV0.3>2500
Density:	3.21 G/cm3
Thermal Expansion Coefficient:	4.5 X 10-6/K
Dielectric Constant:	9.7
Tensile Strength:	>400MPa
Material:	SiC Monocrystal
Size:	10*10 Mm
Breakdown Voltage:	5.5 MV/cm

Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

Product Description:

Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material with good thermal conductivity and high temperature resistance, which is widely used in high-power and high-frequency electronic devices. P-type doping is achieved by introducing elements such as aluminum (Al), which makes the material electropositive and suitable for specific electronic device designs. The bandgap is about 3.0 eV, which is suitable for operation in high-temperature and high-voltage environments. Thermal conductivity is superior to many traditional semiconductor materials and helps improve device efficiency. Mechanical Strength: Good mechanical strength, suitable for high power applications.

In the field of power electronics, it can be used to manufacture high-efficiency power devices, such as MOSFETs and IGBTs. In the field of radio frequency equipment, it has excellent performance in high-frequency applications and is widely used in communication equipment. In the field of LED technology, it can be used as a basic material for blue and ultraviolet LED devices.

Features:

· Wide band gap: The band gap is about 3.0 eV, making it suitable for high temperature, high voltage and high frequency applications.

· Excellent thermal conductivity: With good thermal conductivity, help heat dissipation, improve device performance and reliability.

· High strength and hardness: high mechanical strength, anti-fragmentation and anti-wear, suitable for use in harsh environments.

· Electron mobility: P-type doping still maintains relatively high carrier mobility, supporting efficient electronic devices.

· Optical properties: With unique optical properties, suitable for the field of optoelectronics, such as leds and lasers.

· Chemical stability: Good resistance to chemical corrosion, suitable for harsh working environments.

· Strong adaptability: can be combined with a variety of substrate materials, suitable for a variety of application scenarios.

Technical Parameters:

Applications:

· Power electronics: Used to manufacture high-efficiency power devices, such as MOSFETs and IGBTs, which are widely used in frequency converters, power management, and electric vehicles.
· RF & Microwave Equipment: Used in high-frequency amplifiers, RF power amplifiers, suitable for communication and radar systems.

· Optoelectronics: Used as a substrate in LEDs and lasers, especially in blue and ultraviolet applications.

· High Temperature Sensors: Due to their good thermal stability, they are suitable for high temperature sensors and monitoring equipment.

· Solar energy and energy systems: used in solar inverters and other renewable energy applications to improve energy conversion efficiency.

· Automotive Electronics: Performance optimization and energy saving in the power system of electric and hybrid vehicles.

· Industrial electrical equipment: Power modules for a wide range of industrial automation equipment and machines to improve energy efficiency and reliability.

Customization:

Our SiC substrate is available in the 6H-P type and is RoHS certified. The minimum order quantity is 10pc and the price is by case. The packaging details are customized plastic boxes. The delivery time is within 30 days and we accept T/T payment terms. Our supply ability is 1000pc/month. The SiC substrate size is 10*10 mm. Place of origin is China.

Our services:

1. Factory direct manufacture and sell.

2. Fast, accurate quotes.

3. Reply to you within 24 working hours.

4. ODM: Customized design is avaliable.

5. Speed and precious delivery.

FAQ

1. Q: Compared with N-Type, how about the P-Type?
A: P-Type 4H-SiC substrates, doped with trivalent elements like aluminum, have holes as the majority carriers, providing good conductivity and stability at high temperatures. In contrast, N-Type substrates, doped with pentavalent elements like phosphorus, have electrons as the majority carriers, which typically results in higher electron mobility and lower resistivity.

2. Q: What is the market outlook for P-Type SiC?
A: The market outlook for P-Type SiC is highly positive, driven by increasing demand for high-performance power electronics in electric vehicles, renewable energy systems, and advanced industrial applications.

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Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

High-power Devices SIC Wafer

350μm SIC Wafer

10*10 mm SIC Wafer

Product Description:

Features:

Technical Parameters:

Applications:

Customization:

Our services:

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