Product Details
Place of Origin: China
Brand Name: ZMSH
Certification: ROHS
Payment & Shipping Terms
Delivery Time: 2-4weeks
Payment Terms: T/T
Product Name: |
Silicon Carbide Wafer Sic Wafer |
Grade: |
Zero MPD Production Grade &Zero MPD Production Grade &Zero MPD Production Grade |
Micropipe Density: |
0 Cm-2 |
Resistivity P-type 4H/6H-P: |
≤0.1 Ωꞏcm |
Primary Flat Orientation: |
4H/6H-P {1010} ± 5.0° |
Primary Flat Orientation 3C-N: |
3C-N |
Primary Flat Length: |
Primary Flat Length |
Secondary Flat Length: |
18.0 Mm ± 2.0 Mm |
18.0 Mm ± 2.0 Mm: |
Polish Ra≤1 Nm |
Product Name: |
Silicon Carbide Wafer Sic Wafer |
Grade: |
Zero MPD Production Grade &Zero MPD Production Grade &Zero MPD Production Grade |
Micropipe Density: |
0 Cm-2 |
Resistivity P-type 4H/6H-P: |
≤0.1 Ωꞏcm |
Primary Flat Orientation: |
4H/6H-P {1010} ± 5.0° |
Primary Flat Orientation 3C-N: |
3C-N |
Primary Flat Length: |
Primary Flat Length |
Secondary Flat Length: |
18.0 Mm ± 2.0 Mm |
18.0 Mm ± 2.0 Mm: |
Polish Ra≤1 Nm |
Silicon Carbide Wafer 6H P-Type Standard Production Grade Dia:145.5 mm~150.0 mm thickness 350 μm ± 25 μm
6H P-Type Silicon Carbide wafer‘s abstract
This paper presents the development and characteristics of a 6H silicon carbide (SiC) wafer, which is P-type and manufactured to standard production grade. The wafer exhibits a diameter range between 145.5 mm and 150.0 mm, with a controlled thickness of 350 μm ± 25 μm. Due to its high thermal conductivity, wide bandgap, and excellent resistance to high voltages and temperatures, 6H SiC wafers are highly suitable for applications in power electronics, high-frequency devices, and harsh environments. This study focuses on the manufacturing process, material properties, and performance benchmarks, providing insight into its potential for commercial semiconductor applications.
6H P-Type Silicon Carbide wafer‘s properties
The 6H P-Type Standard Production Grade Silicon Carbide (SiC) wafer has the following properties:
These properties make the 6H P-Type SiC wafer an ideal material for high-power, high-frequency, and high-temperature electronic devices, widely used in power electronics, semiconductor devices, radar, and communication systems.
6H P-Type Silicon Carbide wafer‘s data chart
6 inch diameter Silicon Carbide (SiC) Substrate Specification
| 等级Grade |
精选级(Z 级) Zero MPD Productio Grade (Z Grade) |
工业级(P 级) Standard Production Grade (P Grade) |
测试级(D 级) Zero MPD Production Grade (D Grade) |
||
| 直径 Diameter | 145.5 mm~150.0 mm | ||||
| 厚度 Thickness35 | 350μm ± 25 μm | ||||
| 晶片方向 Wafer Orientation |
- Off axis: 2.0°-4.0°toward [1120] ± 0.5° for 4H/6H-P, On axis:〈111〉± 0.5° for 3C-N |
||||
| 微管密度 ※ Micropipe Density | 0 cm-2 | ||||
| 电 阻 率 ※ Resistivity | p-type 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| n-type 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| 主定位边方向 Primary Flat Orientation | 4H 6H-P |
- {1010} ± 5.0° |
|||
| 3C-N |
- {110} ± 5.0° |
||||
| 主定位边长度 Primary Flat Length | 32.5 mm ± 2.0 mm | ||||
| 次定位边长度 Secondary Flat Length |
18.0 mm ± 2.0 mm |
||||
| 次定位边方向 Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ± 5.0° | ||||
| 边缘去除 Edge Exclusion | 3 mm | 6 mm | |||
| 局部厚度变化/总厚度变化/弯曲度/翘曲度 LTV/TTV/Bow /Warp |
≤2.5 μm/≤5 μm/≤15 μm/≤30 μm |
≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| 表面粗糙度 ※ Roughness | Polish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
|
Edge Cracks By High Intensity Light |
None | Cumulative length ≤ 10 mm, single length≤2 mm | |||
| 六方空洞(强光灯测) ※ Hex Plates By High Intensity Light | Cumulative area ≤0.05% | Cumulative area ≤0.1% | |||
| 多型(强光灯观测) ※ Polytype Areas By High Intensity Light | None | Cumulative area≤3% | |||
| 目测包裹物(日光灯观测) Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% | |||
| 硅面划痕(强光灯观测) # Silicon Surface Scratches By High Intensity Light | None | Cumulative length≤1×wafer diameter | |||
| 崩边(强光灯观测) Edge Chips High By Intensity Light | None permitted ≥0.2mm width and depth | 5 allowed, ≤1 mm each | |||
| 硅面污染物(强光灯观测) Silicon Surface Contamination By High Intensity | None | ||||
| 包装 Packaging | Multi-wafer Cassette or Single Wafer Container | ||||
Orientation of SiC substrate
| Orientation of SiC substrate | |
|
crystal orientation |
Orientation crystallography of the SiC substrate the Angle of inclination between the c axis and the vector perpendicular to the wafer surface (see Figure 1). |
|
Orthogonal orientation deviation |
When the crystal face is intentionally deviated from the (0001) crystal face, the Angle between the normal vector of the crystal face projected on the (0001) plane and the direction [11-20] nearest to the (0001) plane. |
| off-axis |
< 11-20 > Direction deviation 4.0°±0.5° |
| positive axis | <0001> Direction off 0°±0.5° |
6H P-Type Silicon Carbide wafer‘s photo
6H P-Type Silicon Carbide wafer‘s application
The 6H P-Type Silicon Carbide (SiC) wafer has several important applications due to its unique material properties, making it suitable for high-performance electronics and extreme conditions. Key applications include:
Power Electronics: SiC wafers are widely used in power electronic devices such as MOSFETs, diodes, and thyristors. These devices are crucial for high-voltage, high-efficiency applications such as inverters, converters, and motor drives, especially in renewable energy systems, electric vehicles (EVs), and industrial equipment.
High-Temperature Electronics: Due to the high thermal stability of 6H SiC, it is ideal for devices that operate in extreme temperatures, such as sensors, power supplies, and control systems for aerospace, automotive, and industrial applications.
High-Frequency Devices: SiC's wide bandgap makes it suitable for RF (radio frequency) and microwave applications. It's used in radar systems, satellite communication, and wireless communication infrastructure for high-frequency, high-power amplifiers and switches.
Electric Vehicles (EVs): SiC wafers are used in power converters, inverters, and charging systems in electric vehicles, contributing to improved efficiency, faster charging, and extended driving range due to lower energy losses compared to traditional silicon devices.
Aerospace and Defense: SiC’s resistance to radiation and high temperatures makes it an excellent material for applications in space exploration, satellite systems, and military electronics. It is used in high-power amplifiers, transmitters, and sensors for extreme environments.
Renewable Energy Systems: SiC-based devices are essential in renewable energy applications, such as solar power inverters and wind energy systems, due to their high efficiency and ability to handle high voltages and temperatures, reducing energy losses and improving overall system performance.
High-Power Switching Devices: SiC wafers are used to manufacture high-power semiconductor switches that are used in industrial power grids, where efficiency and the ability to operate under high current and voltage conditions are crucial.
LEDs and Optoelectronics: SiC is used as a substrate for LED manufacturing, especially for high-brightness and high-power LEDs, as well as optoelectronic devices used in sensors and optical communication systems.
These applications benefit from the 6H P-Type SiC wafer’s ability to handle high voltages, operate in extreme temperatures, and provide excellent thermal conductivity and high-frequency performance, making it a critical material for advanced electronics.
Q&A
Q:What is the difference between 4H and 6H silicon carbide?
A:The primary difference between 4H and 6H Silicon Carbide (SiC) lies in their crystal structures, which significantly impact their electronic and physical properties.
Crystal Structure:
4H and 6H refer to different polytypes of SiC, characterized by variations in their stacking sequences. The "H" denotes the hexagonal crystal structure, and the number (4 or 6) indicates the number of Si-C bilayers in a unit cell.
Electron Mobility:
One of the most significant differences is in their electron mobility, which affects their efficiency in electronic devices.
Bandgap:
Both 4H and 6H SiC have wide bandgaps, but 4H-SiC has a slightly larger bandgap (3.26 eV) compared to 6H-SiC (3.0 eV). This makes 4H-SiC more suitable for high-voltage and high-temperature applications.
Commercial Use:
Due to its superior electron mobility and larger bandgap, 4H-SiC is the preferred polytype for power devices, especially in high-voltage and high-efficiency applications such as electric vehicles, solar inverters, and industrial electronics.
6H-SiC, while still used, is generally less favored for power electronics but may be found in lower-performance applications or where the difference in mobility is not as critical.
In summary, 4H-SiC is generally considered better for high-performance power electronics due to its superior electron mobility and larger bandgap, while 6H-SiC has more limited use in comparison.
