Silicon Carbide Wafer 4H P-Type Zero MPD Production Grade Dummy Grade 4inch 6inch

Silicon Carbide Wafer 4H P-Type Zero MPD Production Grade Dummy grade 4inch 6inch

Silicon Carbide Wafer 4H P-Type’s abstract

This study presents the characteristics and potential applications of a 4H P-Type Silicon Carbide (SiC) wafer, a semiconductor material known for its exceptional electronic and thermal properties. The 4H-SiC wafer, featuring a hexagonal crystal structure, is specifically doped to exhibit P-type conductivity. It has a wide bandgap of 3.26 eV, high electron mobility, and excellent thermal conductivity, making it highly suitable for high-voltage, high-power, and high-temperature applications. Additionally, its ability to withstand harsh environments, such as high radiation and extreme temperatures, makes it ideal for use in aerospace, power electronics, and renewable energy systems. This paper focuses on the 4H P-Type SiC wafer's manufacturing process, material properties, and its potential for enhancing device performance in advanced electronic systems.

Silicon Carbide Wafer 4H P-Type’s photos

Silicon Carbide Wafer 4H P-Type’s data chart 

4 inch diameter Silicon Carbide (SiC) Substrate Specification

等级Grade			精选级(Z 级) Zero MPD Production Grade (Z Grade)	工业级(P 级) Standard Production Grade (P Grade)	测试级(D 级) Dummy Grade (D Grade)
直径 Diameter			99.5 mm~100.0 mm
厚度 Thickness			350 μm ± 25 μm
晶片方向 Wafer Orientation			Off axis: 2.0°-4.0°toward [112(-)0] ± 0.5° for 4H/6H-P, On axis:〈111〉± 0.5° for 3C-N
微管密度 ※ Micropipe Density			0 cm-2
电 阻 率 ※ Resistivity	p-type 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-type 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
主定位边方向  primary  Flat Orientation		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
主定位边长度 Primary Flat Length			32.5 mm ± 2.0 mm
次定位边长度 Secondary Flat Length			18.0 mm ± 2.0 mm
次定位边方向 Secondary Flat Orientation			Silicon face up: 90° CW. from Prime flat ± 5.0°
边缘去除 Edge Exclusion			3 mm		6 mm
局部厚度变化/总厚度变化/弯曲度/翘曲度 LTV/TTV/Bow /Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
表面粗糙度 ※ Roughness			Polish Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
边缘裂纹(强光灯观测) Edge Cracks By High Intensity Light			None		Cumulative length ≤ 10 mm, single length≤2 mm
六方空洞(强光灯测) ※ Hex Plates By High Intensity Light			Cumulative area ≤0.05%		Cumulative area ≤0.1%
多型(强光灯观测) ※ Polytype Areas By High Intensity Light			None		Cumulative area≤3%
目测包裹物(日光灯观测) Visual Carbon Inclusions			Cumulative area ≤0.05%		Cumulative area ≤3%
硅面划痕(强光灯观测) # Silicon Surface Scratches By High Intensity Light			None		Cumulative length≤1×wafer diameter
崩边(强光灯观测) Edge Chips High By Intensity Light			None permitted ≥0.2mm width and depth		5 allowed, ≤1 mm each
硅面污染物(强光灯观测) Silicon Surface Contamination By High Intensity			None
包装 Packaging			Multi-wafer Cassette or Single Wafer Container

Silicon Carbide Wafer 4H P-Type’s properties

The 4H P-Type Silicon Carbide (SiC) wafer has the following key properties:

Crystal Structure:

4H-SiC has a hexagonal crystal structure with four layers in its stacking sequence. This polytype enhances the material’s electrical properties, particularly for high-performance devices.

P-Type Conductivity:

The wafer is doped with acceptor impurities (like aluminum or boron), giving it P-type conductivity. This allows the wafer to conduct positive charge carriers (holes), making it suitable for applications in power devices and transistors.

Wide Bandgap:

4H-SiC features a wide bandgap of approximately 3.26 eV, enabling it to operate at higher voltages, temperatures, and frequencies compared to silicon. This property makes it ideal for power electronics and high-temperature applications.

High Electron Mobility:

4H-SiC has a higher electron mobility (~900 cm²/Vs) compared to other SiC polytypes, leading to improved performance in high-frequency and high-power electronic devices.

Thermal Conductivity:

With excellent thermal conductivity, 4H-SiC efficiently dissipates heat, making it suitable for devices operating in high-power or high-temperature environments, such as power inverters and RF devices.

High Breakdown Electric Field:

4H-SiC can withstand higher electric fields (~2.2 MV/cm), allowing devices made from it to operate at higher voltages without the risk of breakdown.

Radiation Resistance:

This material is highly resistant to radiation, making it well-suited for use in aerospace, satellite, and nuclear applications.

These properties make the 4H P-Type SiC wafer ideal for high-performance, high-efficiency, and high-durability applications in fields like power electronics, aerospace, and renewable energy.

Silicon Carbide Wafer 4H P-Type’s applications

The 4H P-Type Silicon Carbide (SiC) wafer is widely used in various advanced applications due to its unique material properties. Key applications include:

Power Electronics:

The wide bandgap and high breakdown voltage of 4H-SiC make it ideal for use in power semiconductor devices such as MOSFETs, Schottky diodes, and thyristors. These devices are essential in high-voltage, high-efficiency power systems like inverters, converters, and motor drives for electric vehicles (EVs), renewable energy systems, and industrial equipment.

High-Temperature Electronics:

4H-SiC’s ability to operate at high temperatures makes it suitable for power electronics in extreme environments, such as aerospace, automotive, and oil and gas industries. It can be used in sensors, control circuits, and power modules that need to function under harsh thermal conditions.

High-Frequency Devices:

Due to its high electron mobility and thermal conductivity, 4H-SiC is a preferred material for high-frequency devices, such as RF amplifiers, microwave transistors, and radar systems. It enables higher switching speeds and reduced energy losses, crucial for communications and defense applications.

Electric Vehicles (EVs):

In EVs, 4H-SiC wafers are used in power management systems such as onboard chargers, power inverters, and motor controllers. These devices contribute to greater energy efficiency, faster charging times, and improved vehicle performance by reducing energy losses and heat dissipation.

Renewable Energy Systems:

The high efficiency and durability of 4H-SiC power devices make them integral to renewable energy systems like solar inverters and wind turbine controllers. They help improve system performance by minimizing energy losses and allowing operation under high-stress conditions.

Aerospace and Defense:

The radiation resistance and high-temperature capabilities of 4H-SiC make it suitable for aerospace applications such as satellite systems, space exploration equipment, and military-grade electronics. It ensures reliability and performance in harsh environments with high radiation exposure.

High-Voltage Power Grids:

4H-SiC wafers are used in power transmission and distribution networks. Devices made from this material help increase grid efficiency by reducing energy losses, enabling the integration of renewable energy sources, and improving the stability of power grids.

These applications demonstrate the broad range of industries where 4H P-Type SiC wafers are critical, particularly in sectors that demand high efficiency, high power, and durability under extreme conditions.

Q&A

Q:What is a silicon carbide wafer substrate?

A:A silicon carbide (SiC) wafer substrate is a thin slice of crystalline SiC material used as the foundation for fabricating semiconductor devices. SiC substrates are known for their superior electrical, thermal, and mechanical properties compared to traditional silicon substrates. They offer a wide bandgap, high thermal conductivity, and high breakdown voltage, making them ideal for high-power, high-temperature, and high-frequency applications.

SiC substrates are primarily used in power electronics, including MOSFETs, Schottky diodes, and RF devices, where performance in extreme conditions is critical. They also serve as the foundation for growing epitaxial layers, where additional semiconductor materials are deposited to create advanced electronic structures.

Due to their robustness, SiC substrates are essential in industries such as electric vehicles, renewable energy systems, aerospace, and telecommunications, helping improve efficiency, durability, and overall performance in demanding applications.