Product Details
Place of Origin: CHINA
Brand Name: ZMSH
Certification: rohs
Model Number: 4H-P SiC
Payment & Shipping Terms
Minimum Order Quantity: 10pc
Price: by case
Packaging Details: customzied plastic box
Delivery Time: in 30days
Payment Terms: T/T
Supply Ability: 1000pc/month
Surface Hardness: |
HV0.3>2500 |
Density: |
3.21 G/cm3 |
Thermal Expansion Coefficient: |
4.5 X 10-6/K |
Dielectric Constant: |
9.7 |
Tensile Strength: |
>400MPa |
Size: |
6Inch |
Breakdown Voltage: |
5.5 MV/cm |
Applications: |
Power Electronics, Lasers |
Surface Hardness: |
HV0.3>2500 |
Density: |
3.21 G/cm3 |
Thermal Expansion Coefficient: |
4.5 X 10-6/K |
Dielectric Constant: |
9.7 |
Tensile Strength: |
>400MPa |
Size: |
6Inch |
Breakdown Voltage: |
5.5 MV/cm |
Applications: |
Power Electronics, Lasers |
4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-temperature, high-frequency, and high-power electronic devices. 4H-SiC is a type of its crystal structure that has a hexagonal lattice structure. The wide bandgap (approx. 3.26 eV) allows it to operate in high temperature and high voltage environments. High thermal conductivity (about 4.9 W/m ·· K), superior to silicon, can effectively guide and dissipate heat. P-type doped silicon carbide has a low resistivity and is suitable for the construction of PN junctions. With the development of electric vehicles and renewable energy technologies, the demand for 4H-P type silicon carbide is expected to continue to grow, driving related research and technological advancements.
Features:
| 6-inch diameter Silicon Carbide (SiC) Substrate Specification | |||||
| Grade | Zero MPD Production Grade (Z Grade) |
Standard Production Grade (P Grade) |
Dummy Grade (D Grade) |
||
| Diameter | 145.5 mm~150.0 mm | ||||
| Thickness | 350 μm ± 25 μm | ||||
| Wafer Orientation | Off axis: 2.0°-4.0°toward [1120] ± 0.5° for 4H/6H-P, On axis:〈111〉± 0.5° for 3C-N | ||||
| Micropipe Density | 0 cm-2 | ||||
| Resistivity | p-type 4H/6H-P | ≤0.1 Ω.cm | ≤0.3 Ω.cm | ||
| Primary Flat Orientation | p-type 4H/6H-P | {1010} ± 5.0° | |||
| Primary Flat Length | 32.5 mm ± 2.0 mm | ||||
| Secondary Flat Length | 18.0 mm ± 2.0 mm | ||||
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ± 5.0° | ||||
| Edge Exclusion | 3 mm | 6 mm | |||
| LTV/TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Roughness | Polish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Edge Cracks By High Intensity Light | None | Cumulative length ≤ 10 mm, single length≤2 mm | |||
| Hex Plates By High Intensity Light | Cumulative area ≤0.05% | Cumulative area ≤0.1% | |||
| Polytype Areas By High Intensity Light | None | Cumulative area≤3% | |||
| Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% | |||
| Silicon Surface Scratches By High Intensity Light | None | Cumulative length≤1×wafer diameter | |||
| Edge Chips High By Intensity Light | None permitted ≥0.2mm width and depth | 5 allowed, ≤1 mm each | |||
| Silicon Surface Contamination By High Intensity | None | ||||
| Packaging | Multi-wafer Cassette or Single Wafer Container | ||||
FAQ:
1. Q: Do you offer custom service for 4H-P type SIC substrate?
A: Yes, our company provides custom service for 4H-P type silicon carbide substrate. Customers can choose substrates with different specifications and parameters, such as diameter, thickness, doping concentration, etc., according to their specific needs to meet the requirements of specific applications.
2. Q: How to ensure the quality of 4H-P type silicon carbide substrate?
A: Our company ensures the quality of 4H-P type silicon carbide substrate through strict process control and quality inspection. From raw material selection, crystal growth, cutting and polishing to final inspection, every step follows high standards and strict requirements to ensure that products meet customer expectations and industry standards.
Tag: #SIC, #Silicon carbide substrate, #4H crystal type, #P-type conductivity, #Semiconductor materials, #Sic 4H-P type.
