Product Details
Place of Origin: CHINA
Brand Name: ZMSH
Certification: rohs
Model Number: 3C-N SiC
Payment & Shipping Terms
Minimum Order Quantity: 10pc
Price: by case
Packaging Details: customzied plastic box
Delivery Time: in 30days
Payment Terms: T/T
Supply Ability: 1000pc/month
Size: |
2inch,4inch,6inch,5×5,10×10 |
Dielectric Constant: |
9.7 |
Surface Hardness: |
HV0.3>2500 |
Density: |
3.21 G/cm3 |
Thermal Expansion Coefficient: |
4.5 X 10-6/K |
Breakdown Voltage: |
5.5 MV/cm |
Applications: |
Communications, Radar Systems |
Size: |
2inch,4inch,6inch,5×5,10×10 |
Dielectric Constant: |
9.7 |
Surface Hardness: |
HV0.3>2500 |
Density: |
3.21 G/cm3 |
Thermal Expansion Coefficient: |
4.5 X 10-6/K |
Breakdown Voltage: |
5.5 MV/cm |
Applications: |
Communications, Radar Systems |
Wide bandgap: Bandgap of approximately 3.0 eV for high temperature and high voltage applications.
High Electron Mobility: N-type doping provides good electron mobility and enhances the overall performance of the device.
Excellent thermal conductivity: It has excellent thermal conductivity and effectively improves heat dissipation performance, suitable for high-power applications.
Good mechanical strength: It has high toughness and compressive strength, and is suitable for use in harsh environments.
Chemical resistance: Good resistance to a wide range of chemicals, enhancing the stability of the material.
Adjustable electrical characteristics: By adjusting the doping concentration, different electrical properties can be achieved to meet the needs of a variety of applications.
|
Propery |
N-type 3C-SiC, Single Crystal |
| Lattice Parameters | a=4.349 Å |
| Stacking Sequence | ABC |
| Mohs Hardness | ≈9.2 |
| Density | 2.36 g/cm3 |
| Therm. Expansion Coefficient | 3.8×10-6/K |
| Refraction Index @750nm |
n=2.615 |
| Dielectrc Constant | c~9.66 |
|
Thermal Conductivity |
3-5 W/cm·K@298K |
| Band-Gap | 2.36 eV |
| Break-Down Electrical Field | 2-5×106V/cm |
|
Saturation Drift Velocity |
2.7×107m/s |
※ Silicon carbide material properties is only for reference.
Applications
1. Power electronics: for high-efficiency power converters, inverters and drives, widely used in electric vehicles and renewable energy systems. 2. RF & Microwave Equipment: RF amplifiers, microwave equipment, especially suitable for communication and radar systems. 3. Optoelectronics: It can be used as a building block for LEDs and light detectors, especially in blue and ultraviolet applications. 4. Sensors: Applied to a wide range of sensors in high-temperature and high-power environments, providing reliable performance. 5. Wireless Charging and Battery Management: Used in wireless charging systems and battery management devices to improve efficiency and performance. 6. Industrial electrical equipment: Used in industrial automation and control systems to improve energy efficiency and system stability.
Our SiC substrate is available in the 3C-N type and is RoHS certified. The minimum order quantity is 10pc and the price is by case. The packaging details are customized plastic boxes. The delivery time is within 30 days and we accept T/T payment terms. Our supply ability is 1000pc/month. The SiC substrate size is 6 inch. Place of origin is China.
Tag: #Silicon carbide substrate, #3C-N type SIC, #Semiconductor materials.